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AT45DB161D-MU-SL955 PDF预览

AT45DB161D-MU-SL955

更新时间： 2024-11-13 06:38:23
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
53页 1656K
描述
16-megabit 2.5-volt or 2.7-volt DataFlash

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AT45DB161D-MU-SL955 数据手册

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Features  
•
•
Single 2.5V - 3.6V or 2.7V - 3.6V Supply  
RapidS™ Serial Interface: 66 MHz Maximum Clock Frequency  
– SPI Compatible Modes 0 and 3  
•
User Configurable Page Size  
– 512 Bytes per Page  
– 528 Bytes per Page  
– Page Size Can Be Factory Pre-configured for 512 Bytes  
Page Program Operation  
•
•
– Intelligent Programming Operation  
– 4,096 Pages (512/528 Bytes/Page) Main Memory  
Flexible Erase Options  
16-megabit  
2.5-volt or  
2.7-volt  
– Page Erase (512 Bytes)  
– Block Erase (4 Kbytes)  
– Sector Erase (128 Kbytes)  
– Chip Erase (16 Mbits)  
Two SRAM Data Buffers (512/528 Bytes)  
– Allows Receiving of Data while Reprogramming the Flash Array  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low-power Dissipation  
DataFlash®  
•
•
•
AT45DB161D  
– 7 mA Active Read Current Typical  
– 25 µA Standby Current Typical  
– 9 µA Deep Power Down Typical  
Hardware and Software Data Protection Features  
– Individual Sector  
Sector Lockdown for Secure Code and Data Storage  
– Individual Sector  
Security: 128-byte Security Register  
– 64-byte User Programmable Space  
– Unique 64-byte Device Identifier  
JEDEC Standard Manufacturer and Device ID Read  
100,000 Program/Erase Cycles Per Page Minimum  
Data Retention – 20 Years  
•
•
•
•
•
•
•
•
Industrial Temperature Range  
Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
1. Description  
The AT45DB161D is a 2.5-volt or 2.7-volt, serial-interface sequential access Flash  
memory ideally suited for a wide variety of digital voice-, image-, program code- and  
data-storage applications. The AT45DB161D supports RapidS serial interface for  
applications requiring very high speed operations. RapidS serial interface is SPI com-  
patible for frequencies up to 66 MHz. Its 17,301,504 bits of memory are organized as  
4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the  
AT45DB161D also contains two SRAM buffers of 512/528 bytes each. The buffers  
allow the receiving of data while a page in the main Memory is being reprogrammed,  
as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-  
ity) is easily handled with a self-contained three step read-modify-write operation.  
Unlike conventional Flash memories that are accessed randomly with multiple  
3500J–DFLASH–4/08  
1234567...53

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