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AT45BR3214B PDF预览

AT45BR3214B

更新时间: 2024-11-28 21:53:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储静态存储器
页数 文件大小 规格书
40页 489K
描述
32-MEGABIT DATAFLASH + 4-MEGABIT SRAM STACK MEMORY

AT45BR3214B 数据手册

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Features  
32-Mbit DataFlash and 4-Mbit SRAM  
Single 62-ball (8 mm x 12 mm x 1.2 mm) CBGA Package  
2.7V to 3.3V Operating Voltage  
DataFlash  
Single 2.7V to 3.3V Supply  
Serial Peripheral Interface (SPI) Compatible  
20 MHz Max Clock Frequency  
Page Program Operation  
32-megabit  
DataFlash®  
+ 4-megabit  
SRAM  
– Single Cycle Reprogram (Erase and Program)  
– 8192 Pages (528 Bytes/Page) Main Memory  
Supports Page and Block Erase Operations  
Two 528-byte SRAM Data Buffers – Allows Receiving of Data  
while Reprogramming of Nonvolatile Memory  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low Power Dissipation  
– 4 mA Active Read Current Typical  
– 2 µA CMOS Standby Current Typical  
Hardware Data Protection Feature  
Industrial Temperature Range  
Stack Memory  
AT45BR3214B  
SRAM  
4-megabit (256K x 16)  
2.7V to 3.3V VCC  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Industrial Temperature Range  
Rev. 3356B–DFLASH–10/04  

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