Datasheet > AT29C040A_08

AT29C040A_08

更新时间： 2024-11-08 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
17页	410K
描述
4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory

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AT29C040A_08 数据手册

Features

• Fast Read Access Time – 90 ns

• 5-volt Only Reprogramming

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Internal Program Control and Timer

• Hardware and Software Data Protection

• Two 16K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 10 ms

• DATA Polling for End of Program Detection

• Low Power Dissipation

4-megabit

(512K x 8)

5-volt Only

256-byte Sector

Flash Memory

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Typical Endurance > 10,000 Cycles

• Single 5V 10% Supply

• Green (Pb/Halide-free) Packaging Option

1. Description

AT29C040A

The AT29C040A is a 5-volt only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times up to 90 ns, and a low 220 mW power dissipation.

When the device is deselected, the CMOS standby current is less than 100 µA. The

device endurance is such that any sector can typically be written to in excess of

10,000 times. The programming algorithm is compatible with other devices in Atmel’s

5-volt only Flash family.

To allow for simple in-system reprogrammability, the AT29C040A does not require

high input voltages for programming. Five-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29C040A is performed on a sector basis; 256 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation

of a program cycle, the device will automatically erase the sector and then program

the latched data using an internal control timer. The end of a program cycle can be

detected by DATA polling of I/O7. Once the end of a program cycle has been

detected, a new access for a read or program can begin.

0333L–FLASH–9/08

12 3 4 5 6 7...17

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与AT29C040A_08相关器件

型号	品牌	获取价格	描述	数据表
AT29C040A-10	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-10PC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-10PI	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-10TC	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-10TI	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-12	ATMEL	获取价格	4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory
AT29C040A-12DC	ETC	获取价格	x8 Flash EEPROM
AT29C040A-12DI	ETC	获取价格	x8 Flash EEPROM
AT29C040A-12JC	ATMEL	获取价格	4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory
AT29C040A-12JI	ATMEL	获取价格	4-megabit (512K x 8) 5-volt Only 256-byte Sector Flash Memory

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