Datasheet > AT29BV020_08

AT29BV020_08

更新时间： 2024-11-30 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存电池
页数	文件大小	规格书
16页	369K
描述
2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory

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AT29BV020_08 数据手册

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Software Protected Programming

• Fast Read Access Time – 120 ns

• Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Sector Program Operation

2-megabit

(256K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Two 8K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms Max

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

AT29BV020

1. Description

The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 120 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 50 µA. The device

endurance is such that any sector can typically be written to in excess of 10,000

times. The programming algorithm is compatible with other devices in Atmel’s Low

Voltage Flash family of products.

To allow for simple in-system reprogrammability, the AT29BV020 does not require

high input voltages for programming. The device can be operated with a single 2.7V to

3.6V supply. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29BV020 is performed on a sector basis; 256 bytes of data are

loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0402F–FLASH–9/08

12 3 4 5 6 7...16

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与AT29BV020_08相关器件

型号	品牌	获取价格	描述	数据表
AT29BV020-12JC	ATMEL	获取价格	暂无描述
AT29BV020-12JU	ATMEL	获取价格	2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020-12TI	ATMEL	获取价格	Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29BV020-12TU	ATMEL	获取价格	2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020-15JU	ATMEL	获取价格	2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020-15TC	ATMEL	获取价格	Flash, 256KX8, 150ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29BV020-15TU	ATMEL	获取价格	2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
AT29BV020-25	ATMEL	获取价格	2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV020-25JC	ATMEL	获取价格	2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
AT29BV020-25JCT/R	ATMEL	获取价格	Flash, 256KX8, 250ns, PQCC32, PLASTIC, LCC-32

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