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AT29BV020-35TI PDF预览

AT29BV020-35TI

更新时间: 2024-11-30 22:39:15
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
10页 492K
描述
2 Megabit 256K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory

AT29BV020-35TI 数据手册

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AT29BV020  
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time - 250 ns  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
1024 Sectors (256 bytes/sector)  
2 Megabit  
(256K x 8)  
Internal Address and Data Latches for 256-Bytes  
Two 8 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
Single 2.7-volt  
Battery-Voltage  
CMOS Flash  
Memory  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times up to 250 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
Low Voltage Flash family of products.  
(continued)  
AT29BV020  
Pin Configurations  
Pin Name Function  
A0 - A17  
CE  
Addresses  
Chip Enable  
OE  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
WE  
I/O0 - I/O7  
NC  
PLCC Top View  
TSOP Top View  
Type 1  
0402B  
4-13  

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