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AT29BV020-15JU PDF预览

AT29BV020-15JU

更新时间: 2024-11-30 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池存储内存集成电路
页数 文件大小 规格书
16页 369K
描述
2-megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory

AT29BV020-15JU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFJ包装说明:LEAD AND HALIDE FREE, PLASTIC, MS-016AE, LCC-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84Is Samacsys:N
最长访问时间:150 ns启动块:BOTTOM/TOP
命令用户界面:NO数据轮询:YES
JESD-30 代码:R-PQCC-J32JESD-609代码:e3
长度:13.97 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:2功能数量:1
部门数/规模:1K端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:3.56 mm部门规模:256
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:11.43 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29BV020-15JU 数据手册

 浏览型号AT29BV020-15JU的Datasheet PDF文件第2页浏览型号AT29BV020-15JU的Datasheet PDF文件第3页浏览型号AT29BV020-15JU的Datasheet PDF文件第4页浏览型号AT29BV020-15JU的Datasheet PDF文件第5页浏览型号AT29BV020-15JU的Datasheet PDF文件第6页浏览型号AT29BV020-15JU的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Software Protected Programming  
Fast Read Access Time – 120 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 50 µA CMOS Standby Current  
Sector Program Operation  
2-megabit  
(256K x 8)  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
Two 8K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms Max  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Green (Pb/Halide-free) Packaging Option  
AT29BV020  
1. Description  
The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times to 120 ns, and a low 54 mW power dissipation. When  
the device is deselected, the CMOS standby current is less than 50 µA. The device  
endurance is such that any sector can typically be written to in excess of 10,000  
times. The programming algorithm is compatible with other devices in Atmel’s Low  
Voltage Flash family of products.  
To allow for simple in-system reprogrammability, the AT29BV020 does not require  
high input voltages for programming. The device can be operated with a single 2.7V to  
3.6V supply. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29BV020 is performed on a sector basis; 256 bytes of data are  
loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0402F–FLASH–9/08  

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