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AT28LV64B PDF预览

AT28LV64B

更新时间: 2024-11-27 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
9页 487K
描述
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

AT28LV64B 数据手册

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AT28LV64B  
Features  
Single 3.3V ± 10% Supply  
3-Volt-Only Read and Write Operation  
Software-Protected Programming  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Fast Read Access Time 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
64K (8K x 8)  
Low Voltage  
CMOS  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
E2PROM with  
Page Write and  
Software Data  
Protection  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
Description  
The AT28LV64B is a high-performance electrically erasable programmable read only  
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-  
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-  
lected, the CMOS standby current is less than 20 µA.  
The AT28LV64B is accessed like a static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
(continued)  
Pin Configurations  
AT28LV64B  
Pin Name  
A0 - A12  
CE  
Function  
PDIP, SOIC  
Top View  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
TSOP  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0299C  
2-135  

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