5秒后页面跳转
AT28LV64B-25JC PDF预览

AT28LV64B-25JC

更新时间: 2024-11-28 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路异步传输模式ATM可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
9页 487K
描述
64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection

AT28LV64B-25JC 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.27Is Samacsys:N
最长访问时间:250 ns其他特性:AUTOMATIC WRITE
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:2
功能数量:1端子数量:32
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
页面大小:64 words并行/串行:PARALLEL
电源:3.3 V编程电压:3 V
认证状态:Not Qualified座面最大高度:3.55 mm
最大待机电流:0.00002 A子类别:EEPROMs
最大压摆率:0.015 mA最大供电电压 (Vsup):3.63 V
最小供电电压 (Vsup):2.97 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD切换位:YES
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28LV64B-25JC 数据手册

 浏览型号AT28LV64B-25JC的Datasheet PDF文件第2页浏览型号AT28LV64B-25JC的Datasheet PDF文件第3页浏览型号AT28LV64B-25JC的Datasheet PDF文件第4页浏览型号AT28LV64B-25JC的Datasheet PDF文件第5页浏览型号AT28LV64B-25JC的Datasheet PDF文件第6页浏览型号AT28LV64B-25JC的Datasheet PDF文件第7页 
AT28LV64B  
Features  
Single 3.3V ± 10% Supply  
3-Volt-Only Read and Write Operation  
Software-Protected Programming  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Fast Read Access Time 200 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Internal Control Timer  
64K (8K x 8)  
Low Voltage  
CMOS  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
E2PROM with  
Page Write and  
Software Data  
Protection  
Endurance: 10,000 Cycles  
Data Retention: 10 Years  
JEDEC Approved Byte-Wide Pinout  
Commercial and Industrial Temperature Ranges  
Description  
The AT28LV64B is a high-performance electrically erasable programmable read only  
memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-  
cess times to 200 ns with power dissipation of just 54 mW. When the device is dese-  
lected, the CMOS standby current is less than 20 µA.  
The AT28LV64B is accessed like a static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
(continued)  
Pin Configurations  
AT28LV64B  
Pin Name  
A0 - A12  
CE  
Function  
PDIP, SOIC  
Top View  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
TSOP  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0299C  
2-135  

与AT28LV64B-25JC相关器件

型号 品牌 获取价格 描述 数据表
AT28LV64B-25JCT/R ATMEL

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28LV64B-25JI ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28LV64B-25JIT/R ATMEL

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28LV64B-25PC ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28LV64B-25PI ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28LV64B-25SC ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28LV64B-25SCT/R ATMEL

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28LV64B-25SI ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection
AT28LV64B-25SIT/R ATMEL

获取价格

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28LV64B-25TC ATMEL

获取价格

64K 8K x 8 Low Voltage CMOS E2PROM with Page Write and Software Data Protection