Datasheet > AT28HC64BF-90JU-T

AT28HC64BF-90JU-T

更新时间： 2024-11-17 03:01:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	367K
描述
EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32

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中文翻译

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Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 2 ms Maximum (Standard)

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

– 40 mA Active Current

64K (8K x 8)

High Speed

Parallel

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

EEPROM with

Page Write and

Software Data

Protection

• Single 5 V ±10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Only

1. Description

The AT28HC64BF is a high-performance electrically-erasable and programmable

read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8

bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 55 ns with power dissipation of just 220 mW. When the device

is deselected, the CMOS standby current is less than 100 µA.

AT28HC64BF

The AT28HC64BF is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a

new access for a read or write can begin.

Atmel’s AT28HC64BF has additional features to ensure high quality and manufactura-

bility. The device utilizes internal error correction for extended endurance and

improved data retention characteristics. An optional software data protection mecha-

nism is available to guard against inadvertent writes. The device also includes an

extra 64 bytes of EEPROM for device identification or tracking.

3648B–PEEPR–4/09

12 3 4 5 6 7...16

中文翻译

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与AT28HC64BF-90JU-T相关器件

型号	品牌	获取价格	描述	数据表
AT28HC64BF-90PU	ATMEL	获取价格	64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection
AT28HC64BF-90SU	ATMEL	获取价格	64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection
AT28HC64BF-90SU-T	MICROCHIP	获取价格	EEPROM, 8KX8, 90ns, Parallel, CMOS, PDSO28
AT28HC64BF-90TU	ATMEL	获取价格	64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection
AT28HC64BF-90TU-T	MICROCHIP	获取价格	EEPROM, 8KX8, 90ns, Parallel, CMOS, PDSO28
AT28HC64B-W	ATMEL	获取价格	EEPROM, 120ns, Parallel, CMOS
AT28HC64E-12JCT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64E-12JIT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64E-55JCT/R	ATMEL	获取价格	EEPROM, 8KX8, 55ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64E-55JIT/R	ATMEL	获取价格	EEPROM, 8KX8, 55ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32

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