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AT28HC64BF-90PU PDF预览

AT28HC64BF-90PU

更新时间： 2024-11-16 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
18页 285K
描述
64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

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中文翻译

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AT28HC64BF-90PU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP28,.6
针数：28Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.72最长访问时间：90 ns
命令用户界面：NO数据轮询：YES
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDIP-T28
长度：37.02 mm内存密度：65536 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：28
字数：8192 words字数代码：8000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：8KX8
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP28,.6封装形状：RECTANGULAR
封装形式：IN-LINE页面大小：64 words
并行/串行：PARALLEL电源：5 V
编程电压：5 V认证状态：Not Qualified
座面最大高度：4.826 mm最大待机电流：0.0001 A
子类别：EEPROMs最大压摆率：0.04 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：INDUSTRIAL
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL切换位：YES
宽度：15.24 mm最长写入周期时间 (tWC)：2 ms
Base Number Matches：1

AT28HC64BF-90PU 数据手册

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Features  
•
•
Fast Read Access Time – 70 ns  
Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
Fast Write Cycle Times  
•
•
– Page Write Cycle Time: 2 ms Maximum (Standard)  
– 1 to 64-byte Page Write Operation  
Low Power Dissipation  
– 40 mA Active Current  
64K (8K x 8)  
High Speed  
Parallel  
– 100 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling and Toggle Bit for End of Write Detection  
High Reliability CMOS Technology  
– Endurance: 100,000 Cycles  
•
•
•
– Data Retention: 10 Years  
EEPROM with  
Page Write and  
Software Data  
Protection  
•
•
•
•
•
Single 5 V 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-wide Pinout  
Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging  
1. Description  
The AT28HC64BF is a high-performance electrically-erasable and programmable  
read-only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8  
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 55 ns with power dissipation of just 220 mW. When the device  
is deselected, the CMOS standby current is less than 100 µA.  
AT28HC64BF  
The AT28HC64BF is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to  
64 bytes of data are internally latched, freeing the address and data bus for other  
operations. Following the initiation of a write cycle, the device will automatically write  
the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a  
new access for a read or write can begin.  
Atmel’s AT28HC64BF has additional features to ensure high quality and manufactura-  
bility. The device utilizes internal error correction for extended endurance and  
improved data retention characteristics. An optional software data protection mecha-  
nism is available to guard against inadvertent writes. The device also includes an  
extra 64 bytes of EEPROM for device identification or tracking.  
3648A–PEEPR–10/06  
1234567...18

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AT28HC64BF-90PU 替代型号

型号 品牌 替代类型 描述 数据表
CAT28C64BP-90 ONSEMI

功能相似

 IC 8K X 8 EEPROM 5V, 90 ns, PDIP28, PLASTIC, DIP-28, Programmable ROM

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