是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOP, SOP28,.4 |
针数: | 28 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.72 | 最长访问时间: | 90 ns |
命令用户界面: | NO | 数据轮询: | YES |
耐久性: | 100000 Write/Erase Cycles | JESD-30 代码: | R-PDSO-G28 |
长度: | 17.9 mm | 内存密度: | 65536 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 28 |
字数: | 8192 words | 字数代码: | 8000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 8KX8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP28,.4 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 页面大小: | 64 words |
并行/串行: | PARALLEL | 电源: | 5 V |
编程电压: | 5 V | 认证状态: | Not Qualified |
座面最大高度: | 2.65 mm | 最大待机电流: | 0.0001 A |
子类别: | EEPROMs | 最大压摆率: | 0.04 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 1.27 mm |
端子位置: | DUAL | 切换位: | YES |
宽度: | 7.5 mm | 最长写入周期时间 (tWC): | 2 ms |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AT28HC64BF-90SU-T | MICROCHIP |
获取价格 |
EEPROM, 8KX8, 90ns, Parallel, CMOS, PDSO28 | |
AT28HC64BF-90TU | ATMEL |
获取价格 |
64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection | |
AT28HC64BF-90TU-T | MICROCHIP |
获取价格 |
EEPROM, 8KX8, 90ns, Parallel, CMOS, PDSO28 | |
AT28HC64B-W | ATMEL |
获取价格 |
EEPROM, 120ns, Parallel, CMOS | |
AT28HC64E-12JCT/R | ATMEL |
获取价格 |
EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC64E-12JIT/R | ATMEL |
获取价格 |
EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC64E-55JCT/R | ATMEL |
获取价格 |
EEPROM, 8KX8, 55ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC64E-55JIT/R | ATMEL |
获取价格 |
EEPROM, 8KX8, 55ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 | |
AT28HC64E-70DI | ATMEL |
获取价格 |
EEPROM, 8KX8, 70ns, Parallel, CMOS, CDIP28, 0.600 INCH, CERDIP-28 | |
AT28HC64E-70JCT/R | ATMEL |
获取价格 |
EEPROM, 8KX8, 70ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 |