Datasheet > AT28C64E-12JJ

AT28C64E-12JJ

更新时间： 2024-11-08 04:05:51

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
16页	297K
描述
EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32

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AT28C64E-12JJ 数据手册

Features

•

Fast Read Access Time – 120 ns

Fast Byte Write – 200 µs

Self-timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

Direct Microprocessor Control

– READY/BUSY Open Drain Output

– DATA Polling

•

64K (8K x 8)

Parallel

EEPROMs

Low Power

– 30 mA Active Current

– 100 µA CMOS Standby Current

High Reliability

– Endurance: 10⁵Cycles

– Data Retention: 10 Years

5V 10% Supply

AT28C64E

•

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-wide Pinout

Industrial Temperature Ranges

Green (Pb/Halide-Free) Packaging Option

1. Description

The AT28C64E is a low-power, high-performance 8,192 words by 8-bit nonvolatile

electrically erasable and programmable read-only memory with popular, easy-to-use

features. The device is manufactured with Atmel’s reliable nonvolatile technology.

The AT28C64E is accessed like a Static RAM for the read or write cycles without the

need for external components. During a byte write, the address and data are latched

internally, freeing the microprocessor address and data bus for other operations. Fol-

lowing the initiation of a write cycle, the device will go to a busy state and

automatically clear and write the latched data using an internal control timer. The

device includes two methods for detecting the end of a write cycle, level detection of

RDY/BUSY (unless pin 1 is N.C.) and DATA Polling of I/O₇. Once the end of a write

cycle has been detected, a new access for a read or write can begin.

The CMOS technology offers fast access times of 120 ns at low power dissipation.

When the chip is deselected, the standby current is less than 100 µA.

Atmel’s AT28C64E has additional features to ensure high quality and manufacturabil-

ity. The device utilizes error correction internally for extended endurance and for

improved data retention characteristics. An extra 32 bytes of EEPROM are available

for device identification or tracking.

0001I–PEEPR–10/06

12 3 4 5 6 7...16

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与AT28C64E-12JJ相关器件

型号	品牌	获取价格	描述	数据表
AT28C64E-12JJT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28C64E-12JL	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
AT28C64E-12JLT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28C64E-12JU	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32
AT28C64E-12PC	ATMEL	获取价格	64K 8K x 8 CMOS E2PROM
AT28C64E-12PI	ATMEL	获取价格	64K 8K x 8 CMOS E2PROM
AT28C64E-12PJ	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28C64E-12PL	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28C64E-12PU	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDIP28, GREEN, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28C64E-12SC	ATMEL	获取价格	64K 8K x 8 CMOS E2PROM

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