Datasheet > AT28C04E-15DI

AT28C04E-15DI

更新时间： 2024-10-31 23:32:27

品牌	Logo	应用领域
其他 - ETC		内存集成电路异步传输模式 ATM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	176K
描述
x8 EEPROM

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中文翻译

获取价格

数据手册

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AT28C04E-15DI 数据手册

Features

• Fast Read Access Time - 150 ns

• Fast Byte Write - 200 µs or 1 ms

• Self-Timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

• Direct Microprocessor Control

– DATA POLLING

• Low Power

– 30 mA Active Current

16K (2K x 8)

Parallel

– 100 µA CMOS Standby Current

• High Reliability

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

EEPROMs

• 5V ± 10% Supply

• CMOS & TTL Compatible Inputs and Outputs

• JEDEC Approved Byte Wide Pinout

• Commercial and Industrial Temperature Ranges

AT28C16

Description

The AT28C16 is a low-power, high-performance Electrically Erasable and Program-

mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory

organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable

(continued)

nonvolatile CMOS technology.

Pin Configurations

Pin Name

A0 - A10

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

I/O0 - I/O7

Don’t Connect

PLCC

Top View

PDIP, SOIC

Top View

24 VCC

23 A8

22 A9

29 A8

28 A9

27 NC

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

21 WE

20 OE

19 A10

18 CE

17 I/O7

16 I/O6

15 I/O5

14 I/O4

13 I/O3

A1 10

A0 11

I/O0

I/O1 10

I/O2 11

GND 12

NC 12

I/O0 13

Rev. 0540B–10/98

Note: PLCC package pins 1 and 17

are DON’T CONNECT.

12 3 4 5 6 7...12

中文翻译

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