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AT28C010-20FM/883 PDF预览

AT28C010-20FM/883

更新时间: 2024-11-01 22:07:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
11页 660K
描述
1 Megabit 128K x 8 Paged CMOS E2PROM

AT28C010-20FM/883 数据手册

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AT28C010 Mil  
Features  
Fast Read Access Time - 120 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 128-Bytes  
Internal Control Timer  
Fast Write Cycle Time  
Page Write Cycle Time - 10 ms Maximum  
1 to 128-Byte Page Write Operation  
Low Power Dissipation  
80 mA Active Current  
1 Megabit  
(128K x 8)  
Paged  
300 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 104 or 105 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
CMOS  
E2PROM  
Description  
The AT28C010 is a high-performance Electrically Erasable and Programmable Read  
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
(continued)  
Military  
Pin Configurations  
44 LCC  
Pin Name  
A0 - A16  
CE  
Function  
Top View  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
AT28C010 Mil  
WE  
I/O0 - I/O7  
NC  
CERDIP, FLATPACK  
Top View  
PGA  
Top View  
32 LCC  
Top View  
0353C  
2-243  

AT28C010-20FM/883 替代型号

型号 品牌 替代类型 描述 数据表
AT28C010-20PC ATMEL

完全替代

1 Megabit 128K x 8 Paged CMOS E2PROM
AT28C010-20DM/883 ATMEL

完全替代

1 Megabit 128K x 8 Paged CMOS E2PROM
AT28C010-20JI ATMEL

功能相似

1 Megabit 128K x 8 Paged CMOS E2PROM

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AT28C010-20JIT/R ATMEL

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