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AT27C256R-70RK PDF预览

AT27C256R-70RK

更新时间: 2024-02-17 09:16:28
品牌 Logo 应用领域
美国微芯 - MICROCHIP OTP只读存储器ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
15页 402K
描述
OTP ROM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOIC-28

AT27C256R-70RK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.61
最长访问时间:70 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:18.25 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:2.79 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:8.69 mm

AT27C256R-70RK 数据手册

 浏览型号AT27C256R-70RK的Datasheet PDF文件第1页浏览型号AT27C256R-70RK的Datasheet PDF文件第2页浏览型号AT27C256R-70RK的Datasheet PDF文件第3页浏览型号AT27C256R-70RK的Datasheet PDF文件第5页浏览型号AT27C256R-70RK的Datasheet PDF文件第6页浏览型号AT27C256R-70RK的Datasheet PDF文件第7页 
6. Operating Modes  
Mode/Pin  
CE  
VIL  
VIL  
VIH  
VIL  
OE  
VIL  
VIH  
Ai  
Ai  
VPP  
VCC  
VCC  
VCC  
VPP  
VPP  
VCC  
VPP  
Outputs  
DOUT  
Read  
Output Disable  
Standby  
X(1)  
X(1)  
Ai  
High Z  
High Z  
DIN  
X(1)  
Rapid Program(2)  
PGM Verify(2)  
Optional PGM Verify(2)  
PGM Inhibit(2)  
VIH  
VIL  
VIL  
VIH  
X(1)  
Ai  
DOUT  
VIL  
VIH  
Ai  
DOUT  
X(1)  
High Z  
(3)  
A9 = VH  
Product Identification(4)  
VIL  
VIL  
A0 = VIH or VIL  
A1 - A14 = VIL  
VCC  
Identification Code  
Notes: 1. X can be VIL or VIH.  
2. Refer to Programming Characteristics.  
3. VH = 12.0 0.5V.  
4. Two identifier bytes may be selected. All Ai inputs are held low (VIL), except A9 which is set to VH and A0 which is toggled  
low (VIL) to select the Manufacturer’s Identification byte and high (VIH) to select the Device Code byte.  
7. DC and AC Operating Conditions for Read Operation  
AT27C256R  
-45  
-70  
Operating Temp. (Case)  
Ind.  
-40°C - 85°C  
-40°C - 85° C  
-40°C - 125°C  
5V 10%  
Auto.  
VCC Supply  
5V 10%  
8. DC and Operating Characteristics for Read Operation  
Symbol  
Parameter  
Condition  
Min  
Max  
Units  
µA  
µA  
µA  
µA  
µA  
µA  
mA  
mA  
V
Ind.  
1
ILI  
Input Load Current  
VIN = 0V to VCC  
Auto.  
Ind.  
5
5
10  
ILO  
Output Leakage Current  
VOUT = 0V to VCC  
Auto.  
(2)  
IPP1  
VPP(1) Read/Standby Current VPP = VCC  
10  
I
SB1 (CMOS), CE = VCC 0.3V  
100  
1
ISB  
VCC(1) Standby Current  
ISB2 (TTL), CE = 2.0 to VCC + 0.5V  
f = 5 MHz, IOUT = 0 mA, E = VIL  
ICC  
VCC Active Current  
Input Low Voltage  
Input High Voltage  
Output Low Voltage  
Output High Voltage  
20  
VIL  
-0.6  
2.0  
0.8  
VIH  
VOL  
VOH  
VCC + 0.5  
0.4  
V
IOL = 2.1 mA  
V
IOH = -400 µA  
2.4  
V
Notes: 1. VCC must be applied simultaneously with or before VPP, and removed simultaneously with or after VPP..  
2. VPP may be connected directly to VCC, except during programming. The supply current would then be the sum of ICC and IPP.  
4
AT27C256R  
0014M–EPROM–12/07  

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