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AT27C256R-70RK PDF预览

AT27C256R-70RK

更新时间: 2024-01-12 15:04:36
品牌 Logo 应用领域
美国微芯 - MICROCHIP OTP只读存储器ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
15页 402K
描述
OTP ROM, 32KX8, 70ns, CMOS, PDSO28, 0.330 INCH, PLASTIC, SOIC-28

AT27C256R-70RK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:28
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.61
最长访问时间:70 nsJESD-30 代码:R-PDSO-G28
JESD-609代码:e3长度:18.25 mm
内存密度:262144 bit内存集成电路类型:OTP ROM
内存宽度:8功能数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:2.79 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:8.69 mm

AT27C256R-70RK 数据手册

 浏览型号AT27C256R-70RK的Datasheet PDF文件第1页浏览型号AT27C256R-70RK的Datasheet PDF文件第2页浏览型号AT27C256R-70RK的Datasheet PDF文件第4页浏览型号AT27C256R-70RK的Datasheet PDF文件第5页浏览型号AT27C256R-70RK的Datasheet PDF文件第6页浏览型号AT27C256R-70RK的Datasheet PDF文件第7页 
AT27C256R  
3. System Considerations  
Switching between active and standby conditions via the Chip Enable pin may produce tran-  
sient voltage excursions. Unless accommodated by the system design, these transients may  
exceed datasheet limits, resulting in device non-conformance. At a minimum, a 0.1 µF high  
frequency, low inherent inductance, ceramic capacitor should be utilized for each device. This  
capacitor should be connected between the VCC and Ground terminals of the device, as close  
to the device as possible. Additionally, to stabilize the supply voltage level on printed circuit  
boards with large EPROM arrays, a 4.7 µF bulk electrolytic capacitor should be utilized, again  
connected between the VCC and Ground terminals. This capacitor should be positioned as  
close as possible to the point where the power supply is connected to the array.  
4. Block Diagram  
5. Absolute Maximum Ratings*  
*NOTICE:  
Stresses beyond those listed under “Absolute Maxi-  
mum Ratings” may cause permanent damage to  
the device. This is a stress rating only and func-  
tional operation of the device at these or any other  
conditions beyond those indicated in the opera-  
tional sections of this specification is not implied.  
Exposure to absolute maximum rating conditions  
for extended periods may affect device reliability.  
Temperature Under Bias................................ -55°C to +125°C  
Storage Temperature..................................... -65°C to +150°C  
Voltage on Any Pin with  
Respect to Ground .........................................-2.0V to +7.0V(1)  
Voltage on A9 with  
Respect to Ground ......................................-2.0V to +14.0V(1)  
VPP Supply Voltage with  
Respect to Ground .......................................-2.0V to +14.0V(1)  
Note:  
1. Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns.Maximum output pin voltage is  
VCC + 0.75V dc which may overshoot to +7.0 volts for pulses of less than 20 ns.  
3
0014M–EPROM–12/07  

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