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AT26DF161A_06 PDF预览

AT26DF161A_06

更新时间: 2024-11-15 04:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
41页 710K
描述
16-megabit 2.7-volt Only Serial Firmware DataFlash Memory

AT26DF161A_06 数据手册

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Features  
Single 2.7V - 3.6V Supply  
Serial Peripheral Interface (SPI) Compatible  
– Supports SPI Modes 0 and 3  
70 MHz Maximum Clock Frequency  
Flexible, Uniform Erase Architecture  
– 4-Kbyte Blocks  
– 32-Kbyte Blocks  
– 64-Kbyte Blocks  
16-megabit  
2.7-volt Only  
Serial Firmware  
DataFlash®  
Memory  
– Full Chip Erase  
Individual Sector Protection with Global Protect/Unprotect Feature  
– Thirty-two 64-Kbyte Physical Sectors  
Hardware Controlled Locking of Protected Sectors  
Flexible Programming Options  
– Byte/Page Program (1 to 256 Bytes)  
– Sequential Program Mode Capability  
Automatic Checking and Reporting of Erase/Program Failures  
JEDEC Standard Manufacturer and Device ID Read Methodology  
Low Power Dissipation  
– 5 mA Active Read Current (Typical)  
– 10 µA Deep Power-down Current (Typical)  
Endurance: 100,000 Program/Erase Cycles  
Data Retention: 20 Years  
AT26DF161A  
Complies with Full Industrial Temperature Range  
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
– 8-lead SOIC (150-mil and 200-mil wide)  
– 8-contact MLF (5 x 6 mm)  
Preliminary  
1. Description  
The AT26DF161A is a serial interface Flash memory device designed for use in a  
wide variety of high-volume consumer-based applications in which program code is  
shadowed from Flash memory into embedded or external RAM for execution. The  
flexible erase architecture of the AT26DF161A, with its erase granularity as small as  
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional  
data storage EEPROM devices.  
The physical sectoring and the erase block sizes of the AT26DF161A have been opti-  
mized to meet the needs of today’s code and data storage applications. By optimizing  
the size of the physical sectors and erase blocks, the memory space can be used  
much more efficiently. Because certain code modules and data storage segments  
must reside by themselves in their own protected sectors, the wasted and unused  
memory space that occurs with large sectored and large block erase Flash memory  
devices can be greatly reduced. This increased memory space efficiency allows addi-  
tional code routines and data storage segments to be added while still maintaining the  
same overall device density.  
3640A–DFLASH–11/06  

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