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AT26DF321_06 PDF预览

AT26DF321_06

更新时间: 2024-09-28 04:07:15
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
34页 566K
描述
32-megabit 2.7-volt Only Serial Firmware DataFlash Memory

AT26DF321_06 数据手册

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Features  
Single 2.7V - 3.6V Supply  
Serial Peripheral Interface (SPI) Compatible  
– Supports SPI Modes 0 and 3  
66 MHz Maximum Clock Frequency  
Flexible, Uniform Erase Architecture  
– 4-Kbyte Blocks  
– 32-Kbyte Blocks  
– 64-Kbyte Blocks  
32-megabit  
2.7-volt Only  
Serial Firmware  
DataFlash®  
Memory  
– Full Chip Erase  
Individual Sector Protection with Global Protect/Unprotect Feature  
– Sixty-Four 64-Kbyte Physical Sectors  
Hardware Controlled Locking of Protected Sectors  
Flexible Programming  
– Byte/Page Program (1 to 256 Bytes)  
JEDEC Standard Manufacturer and Device ID Read Methodology  
Low Power Dissipation  
– 7 mA Active Read Current (Typical)  
– 4 µA Deep Power-Down Current (Typical)  
Endurance: 100,000 Program/Erase Cycles  
Data Retention: 20 Years  
Complies with Full Industrial Temperature Range  
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
– 8-lead SOIC (200-mil wide)  
AT26DF321  
Preliminary  
– 16-lead SOIC (300-mil wide)  
1. Description  
The AT26DF321 is a serial interface Flash memory device designed for use in a wide  
variety of high-volume consumer based applications in which program code is shad-  
owed from Flash memory into embedded or external RAM for execution. The flexible  
erase architecture of the AT26DF321, with its erase granularity as small as 4-Kbytes,  
makes it ideal for data storage as well, eliminating the need for additional data storage  
EEPROM devices.  
The physical sectoring and the erase block sizes of the AT26DF321 have been opti-  
mized to meet the needs of today's code and data storage applications. By optimizing  
the size of the physical sectors and erase blocks, the memory space can be used  
much more efficiently. Because certain code modules and data storage segments  
must reside by themselves in their own protected sectors, the wasted and unused  
memory space that occurs with large sectored and large block erase Flash memory  
devices can be greatly reduced. This increased memory space efficiency allows addi-  
tional code routines and data storage segments to be added while still maintaining the  
same overall device density.  
See applicable errata in  
Section 17.  
3633C–DFLASH–08/06  

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