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AT26F004_08 PDF预览

AT26F004_08

更新时间: 2024-09-28 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
38页 704K
描述
4-megabit 2.7-volt Only Serial Firmware DataFlash Memory

AT26F004_08 数据手册

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Features  
Single 2.7V - 3.6V Supply  
Serial Peripheral Interface (SPI) Compatible  
– Supports SPI Modes 0 and 3  
33 MHz Maximum Clock Frequency  
Flexible, Uniform Erase Architecture  
– 4-Kbyte Blocks  
– 32-Kbyte Blocks  
– 64-Kbyte Blocks  
4-megabit  
– Full Chip Erase  
Optimized Physical Sectoring for Code Shadowing and Code + Data Storage  
Applications  
2.7-volt Only  
Serial Firmware  
DataFlash®  
Memory  
– One 16-Kbyte Top Boot Sector  
– Two 8-Kbyte Sectors  
– One 32-Kbyte Sector  
– Seven 64-Kbyte Sectors  
Individual Sector Protection for Program/Erase Protection  
Hardware Controlled Locking of Protected Sectors  
Byte Program Architecture with Sequential Byte Program Mode Capability  
– Sequential Byte Program Mode Improves Throughput for  
Programming Multiple Bytes  
AT26F004  
JEDEC Standard Manufacturer and Device ID Read Methodology  
Low Power Dissipation  
– 7 mA Active Read Current (Typical)  
– 15 µA Deep Power-down Current (Typical)  
Endurance: 100,000 Program/Erase Cycles  
Data Retention: 20 Years  
Complies with Full Industrial Temperature Range  
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
– 8-lead SOIC (150-mil and 208-mil wide)  
– 8-pad MLF (6 x 5 x 1.00 mm)  
For New  
Designs Use  
AT25DF041A  
1. Description  
The AT26F004 is a serial interface Flash memory device designed for use in a wide  
variety of high-volume consumer based applications in which program code is shad-  
owed from Flash memory into embedded or external RAM for execution. The flexible  
erase architecture of the AT26F004, with its erase granularity as small as 4 Kbytes,  
makes it ideal for data storage as well, eliminating the need for additional data storage  
EEPROM devices.  
The physical sectoring and the erase block sizes of the AT26F004 have been opti-  
mized to meet the needs of today's code and data storage applications. By optimizing  
the size of the physical sectors and erase blocks, the memory space can be used  
much more efficiently. Because certain code modules and data storage segments  
must reside by themselves in their own protected sectors, the wasted and unused  
memory space that occurs with large sectored and large block erase Flash memory  
devices can be greatly reduced. This increased memory space efficiency allows addi-  
tional code routines and data storage segments to be added while still maintaining the  
same overall device density.  
3588D–DFLASH–10/08  

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