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AT25PE40 PDF预览

AT25PE40

更新时间: 2024-10-28 14:58:11
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
62页 2615K
描述
4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory

AT25PE40 数据手册

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AT25PE40  
4-Mbit DataFlash-L  
Page Erase Serial Flash Memory  
DATASHEET  
Features  
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Single 1.65V - 3.6V supply  
Serial Peripheral Interface (SPI) compatible  
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Supports SPI modes 0 and 3  
Supports RapidSoperation  
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Continuous read capability through entire array  
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Up to 85MHz  
Low-power read option up to 15 MHz  
Clock-to-output time (tV) of 6ns maximum  
User configurable page size  
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256 bytes per page (default)  
264 bytes per page (customer selectable option)  
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Two fully independent SRAM data buffers (256/264 bytes)  
Allows receiving data while reprogramming the main memory array  
Flexible programming options  
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Byte/Page Program (1 to 256/264 bytes) directly into main memory  
Buffer Write  
Buffer to Main Memory Page Program  
Single Command Page Read-Modify-Write Option  
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Flexible erase options  
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Page Erase (256/264 bytes)  
Block Erase (2KB)  
Sector Erase (64KB)  
Chip Erase (4-Mbits)  
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128-byte Security Register  
128 bytes factory programmed with a unique identifier  
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Hardware and software controlled reset options  
JEDEC Standard Manufacturer and Device ID Read  
Low-power dissipation  
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300nA Ultra-Deep Power-Down current (typical)  
5µA Deep Power-Down current (typical)  
25µA Standby current (typical)  
7mA Active Read current (typical)  
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Endurance: 100,000 program/erase cycles per page minimum  
Data retention: 20 years  
Complies with full industrial temperature range  
Green (Pb/Halide-free/RoHS compliant) packaging options  
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8-lead SOIC (0.150" wide and 0.208" wide)  
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)  
DS-25PE40-142D––2/2022  

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