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AT21CS01-SSUM10-T PDF预览

AT21CS01-SSUM10-T

更新时间: 2024-11-28 20:01:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
47页 421K
描述
EEPROM

AT21CS01-SSUM10-T 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.34
JESD-30 代码:R-PDSO-G8长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
筛选级别:ISO/TS-16949座面最大高度:1.75 mm
串行总线类型:1-WIRE最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

AT21CS01-SSUM10-T 数据手册

 浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第2页浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第3页浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第4页浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第5页浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第6页浏览型号AT21CS01-SSUM10-T的Datasheet PDF文件第7页 
AT21CS01/AT21CS11  
Single-Wire, I/O Powered 1-Kbit (128 x 8) Serial EEPROM  
with a Unique, Factory-Programmed 64-Bit Serial Number  
Features  
LowVoltage Operation:  
AT21CS01 is self-powered via the 1.7V to 3.6V pullup voltage on the SI/O line  
AT21CS11 is self-powered via the 2.7V to 4.5V pullup voltage on the SI/O line  
Internally Organized as 128 Words of Eight Bits Each (1-Kbit)  
Single-Wire Serial Interface with I2C Protocol Structure:  
Device communication is achieved through a single I/O pin  
Standard Speed and High-Speed Mode Options:  
15.4 kbps maximum bit rate in Standard Speed mode (AT21CS01 only)  
125 kbps maximum bit rate in High-Speed mode (AT21CS01 and AT21CS11)  
8Byte Page Write or Single Byte Writes Allowed  
Discovery Response Feature for Quick Detection of Devices on the Bus  
ROM Zone Support:  
Device is segmented into four 256bit zones, each of which can be permanently made  
readonly (ROM)  
256bit Security Register:  
Lower eight bytes contains a factory-programmed, read-only, 64bit serial number that is  
unique to all Microchip singlewire products  
Next eight bytes are reserved for future use and will read FFh  
Upper 16 bytes are userprogrammable and permanently lockable  
SelfTimed Write Cycle (5 ms maximum)  
Manufacturer Identification Register:  
Device responds with unique value for Microchip as well as density and revision information  
High Reliability:  
Endurance: 1,000,000 write cycles  
Data retention: 100 years  
IEC 61000-4-2 Level 4 ESD Compliant (±8 kV Contact, ±15 kV Air Discharge)  
Green (Lead-free/Halide-free/RoHS Compliant) Package Options  
Die Sale Options in Wafer Form and Tape and Reel  
Packages  
2-pad XSFN, 3-lead SOT23, 8-lead SOIC and 4-ball thin WLCSP.  
DS20005857A-page 1  
Datasheet  
© 2017 Microchip Technology Inc.  

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