Datasheet > AT21CS11-STH10-T

AT21CS11-STH10-T

更新时间： 2024-11-29 03:41:23

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
50页	989K
描述
EEPROM

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数据手册

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AT21CS11-STH10-T 数据手册

AT21CS01/AT21CS11

Single-Wire, I/O Powered 1-Kbit (128 x 8) Serial EEPROM

with a Unique, Factory-Programmed 64-Bit Serial Number

Features

• Low‑Voltage Operation:

– AT21CS01 is self-powered via the 1.7V to 3.6V pull‑up voltage on the SI/O line

– AT21CS11 is self-powered via the 2.7V to 4.5V pull‑up voltage on the SI/O line

• Internally Organized as 128 x 8 (1 K-bit)

• Industrial Temperature Range: -40°C to +85°C

• Single-Wire Serial Interface with I²C Protocol Structure:

– Device communication is achieved through a single I/O pin

• Standard Speed and High-Speed Mode Options:

– 15.4 kbps maximum bit rate in Standard Speed mode (AT21CS01 only)

– 125 kbps maximum bit rate in High-Speed mode (AT21CS01 and AT21CS11)

• 8‑Byte Page Write or Single Byte Writes Allowed

• Discovery Response Feature for Quick Detection of Devices on the Bus

• ROM Zone Support:

– Device is segmented into four 256‑bit zones, each of which can be permanently made read‑only

(ROM)

• 256‑Bit Security Register:

– Lower eight bytes contains a factory-programmed, read-only, 64‑bit serial number that is unique

to all Microchip single‑wire devices

– Next eight bytes are reserved for future use and will read FFh

– Upper 16 bytes are user‑programmable and permanently lockable

• Self‑Timed Write Cycle: 5 ms Maximum

• Manufacturer Identification Register:

– Device responds with unique value for Microchip as well as density and revision information

• High Reliability:

– Endurance: 1,000,000 write cycles

– Data retention: 100 years

– IEC 61000-4-2 Level 4 ESD Compliant (±8 kV Contact, ±15 kV Air Discharge)

• Green (Lead-free/Halide-free/RoHS Compliant) Package Options

• Die Sale Options: Wafer Form and Tape and Reel

Packages

• 2-pad XSFN, 3-lead SOT23, 8-lead SOIC and 4-ball WLCSP

DS20005857B-page 1

Datasheet

12 3 4 5 6 7...50

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