Datasheet > AT21CS11-MS1110-B

AT21CS11-MS1110-B

更新时间： 2024-11-29 04:02:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
47页	421K
描述
EEPROM

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AT21CS11-MS1110-B 数据手册

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AT21CS01/AT21CS11

Single-Wire, I/O Powered 1-Kbit (128 x 8) Serial EEPROM

with a Unique, Factory-Programmed 64-Bit Serial Number

Features

•

Low‑Voltage Operation:

–

AT21CS01 is self-powered via the 1.7V to 3.6V pull‑up voltage on the SI/O line

–

AT21CS11 is self-powered via the 2.7V to 4.5V pull‑up voltage on the SI/O line

•

Internally Organized as 128 Words of Eight Bits Each (1-Kbit)

Single-Wire Serial Interface with I²C Protocol Structure:

–

Device communication is achieved through a single I/O pin

•

Standard Speed and High-Speed Mode Options:

–

15.4 kbps maximum bit rate in Standard Speed mode (AT21CS01 only)

125 kbps maximum bit rate in High-Speed mode (AT21CS01 and AT21CS11)

•

8‑Byte Page Write or Single Byte Writes Allowed

Discovery Response Feature for Quick Detection of Devices on the Bus

ROM Zone Support:

–

Device is segmented into four 256‑bit zones, each of which can be permanently made

read‑only (ROM)

•

256‑bit Security Register:

–

Lower eight bytes contains a factory-programmed, read-only, 64‑bit serial number that is

unique to all Microchip single‑wire products

–

Next eight bytes are reserved for future use and will read FFh

Upper 16 bytes are user‑programmable and permanently lockable

•

Self‑Timed Write Cycle (5 ms maximum)

Manufacturer Identification Register:

–

Device responds with unique value for Microchip as well as density and revision information

•

High Reliability:

–

Endurance: 1,000,000 write cycles

Data retention: 100 years

IEC 61000-4-2 Level 4 ESD Compliant (±8 kV Contact, ±15 kV Air Discharge)

•

Green (Lead-free/Halide-free/RoHS Compliant) Package Options

Die Sale Options in Wafer Form and Tape and Reel

Packages

2-pad XSFN, 3-lead SOT23, 8-lead SOIC and 4-ball thin WLCSP.

DS20005857A-page 1

Datasheet

12 3 4 5 6 7...47

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