Data Sheet
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF
AT1140
Features
General Description
•
•
•
•
•
•
•
•
Clamping Voltage: 11.5V at 20A 100ns, TLP
10.5V at 6A 8μs/20μs
IEC 61000-4-2: +24kV, -18kV (Air)
IEC 61000-4-2: +20kV, -16kV (Contact)
IEC 61000-4-5 (Lightning, 8μs/20μs): ±6A
Input Capacitance From I/O to VSS: 0.5pF
TLP Dynamic Resistance: 0.25Ω
BCD ITVS (Integrated Transient Voltage Suppression)
devices are designed and built using BCD proprietary
process technology. These devices integrate the
various diodes, transistors and resistors into the BCD
ITVS products. These diodes and transistors feature
low parasitic resistance and the diodes also exhibit
low capacitance. Using these devices, BCD is able to
design voltage clamping products where low
capacitance associated with low dynamic resistance is
required.
Monolithic Silicon Technology
Applications
The BCD AT1140 is a general purpose, high
performance device suitable for protecting four high
speed I/Os. These devices are assembled in DFN
packages for operation at higher frequencies
minimizing distortion to the lines being protected.
•
•
•
•
•
•
•
•
DVI
Ethernet Port: 10/100/1000 Mb/s
HDMI 1.3, High Definition Multi Media
IEEE 1394 to 3.2Gb/s
MDDI
PCI Express
SATA /eSATA
The AT1140 is available in the DFN-2.5×1.0-10
package. This package allows simple and optimal
placement in existing high-speed PCB layouts.
USB 2.0 to 480 MHz
Pin Configuration
DN Package
(DFN-2.5×1.0-10)
Figure 1. Pin Configuration of AT1140 (Top View)
Aug. 2012 Rev. 1.2
BCD Semiconductor Manufacturing Limited
1