Datasheet > AT1140DN-5.0TRG1

AT1140DN-5.0TRG1

更新时间： 2024-10-29 12:26:51

品牌	Logo	应用领域
BCDSEMI		电视
页数	文件大小	规格书
7页	382K
描述
General Purpose ITVS, 4 I/Os, CI/O-VSS<0.65pF

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AT1140DN-5.0TRG1 数据手册

Data Sheet

General Purpose ITVS, 4 I/Os, C_I/O-VSS<0.65pF

AT1140

Features

General Description

•

Clamping Voltage: 11.5V at 20A 100ns, TLP

10.5V at 6A 8μs/20μs

IEC 61000-4-2: +24kV, -18kV (Air)

IEC 61000-4-2: +20kV, -16kV (Contact)

IEC 61000-4-5 (Lightning, 8μs/20μs): ±6A

Input Capacitance From I/O to VSS: 0.5pF

TLP Dynamic Resistance: 0.25Ω

BCD ITVS (Integrated Transient Voltage Suppression)

devices are designed and built using BCD proprietary

process technology. These devices integrate the

various diodes, transistors and resistors into the BCD

ITVS products. These diodes and transistors feature

low parasitic resistance and the diodes also exhibit

low capacitance. Using these devices, BCD is able to

design voltage clamping products where low

capacitance associated with low dynamic resistance is

required.

Monolithic Silicon Technology

Applications

The BCD AT1140 is a general purpose, high

performance device suitable for protecting four high

speed I/Os. These devices are assembled in DFN

packages for operation at higher frequencies

minimizing distortion to the lines being protected.

•

DVI

Ethernet Port: 10/100/1000 Mb/s

HDMI 1.3, High Definition Multi Media

IEEE 1394 to 3.2Gb/s

MDDI

PCI Express

SATA /eSATA

The AT1140 is available in the DFN-2.5×1.0-10

package. This package allows simple and optimal

placement in existing high-speed PCB layouts.

USB 2.0 to 480 MHz

Pin Configuration

DN Package

(DFN-2.5×1.0-10)

Figure 1. Pin Configuration of AT1140 (Top View)

Aug. 2012 Rev. 1.2

BCD Semiconductor Manufacturing Limited

12 3 4 5 6 7

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