Voltage Variable Absorptive
Attenuator, 800 - 1000 MHz
V 7.00
Features
SOW-16
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Input IP3: +31 dBm Min. (Full Attenuation Range)
Input IP3 is 15 -20 dB Better Than GaAs
Linear Operation: +20 dBm Min.
Plastic SOIC, Wide Body, SMT Package
38 dB Dynamic Range (With 30 mA Bias Current)
Single Control Voltage
50 ohm Impedance
Linear Driver, DR65-0002, Available
Test Boards are Available
Tape and Reel Packaging Available
Description
M/A-COM's AT10-0009 is a PIN diode based voltage
variable attenuator. This device is in a SOIC-16, wide body
plastic surface mount package. These attenuators have
linear operating power and input intercept point levels
15 - 20 dB better than GaAs FET MMIC voltage variable
attenuators. They are ideally suited for use where low
distortion, high linear operating power and high dynamic
range are required. These devices are optimized for the
GSM frequency band, but exhibit excellent performance
and repeatability over the entire specified frequency band.
The AT10-0009 is ideally suited for wireless
communications systems.
Package outline conforms to JEDEC standard MS-013AA.
Electrical Specifications: TA = 25°C
Parameter
Test Conditions
Frequency
Units
Min
Typical
Max
Insertion Loss
0 volts
800-1000 MHz
925 - 960 MHz
dB
dB
—
—
3.5
3.3
4.2
3.9
Attenuation
(Above Loss)
12 mA bias current
0 to 30 dB attenuation
0 to 30 dB attenuation
800-1000 MHz
925 - 960 MHz
dB
dB
30
33
-
38
—
—
Frequency
Flatness
800-1000 MHz
925 - 960 MHz
dB
dB
—
—
1.5
0.4
2.5
0.8
VSWR
800-1000 MHz
925 - 960 MHz
Ratio
Ratio
—
—
1.6:1
1.4:1
2.0:1
1.7:1
Switching Speed
Linear Operation
50% Control to 90%/10% RF
—
800-1000 MHz
µs
—
—
10.0
800-1000 MHz
dBm
—
+20
—
Input IP3
I Control
Two-tone inputs up to +10 dBm
—
800-1000 MHz
800-1000 MHz
dBm
mA
+35
—
+40
—
—-
30