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AT10-0019TR PDF预览

AT10-0019TR

更新时间: 2024-02-12 12:48:00
品牌 Logo 应用领域
泰科 - TE 二极管射频微波衰减器
页数 文件大小 规格书
2页 224K
描述
PIN Diode Based Variable Attenuator, 50 - 1000 MHz

AT10-0019TR 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.26标称衰减:42 dB
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):30 dBm最大插入损耗:2.8 dB
最大工作频率:1000 MHz最小工作频率:50 MHz
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:VARIABLE ATTENUATOR最大电压驻波比:2.1

AT10-0019TR 数据手册

 浏览型号AT10-0019TR的Datasheet PDF文件第2页 
PIN Diode Based Variable  
Attenuator, 50 - 1000 MHz  
V 5.00  
Features  
SOW-16  
n
n
n
n
n
n
High Dynamic Range: 42dB Typical  
Flat Attenuation vs. Frequency  
High P1dB Compression  
Operates on a Single +5V Supply:  
SOW-16, Wide Body Package  
50 Ohm Nominal Impedance  
Description  
M/A-COM's AT10-0019 is a Voltage Controlled PIN diode  
based p attenuator packaged in a low cost, 16 lead wide  
body plastic SMT package. The PIN diode design makes  
this part well suited for applications where low distortion or  
high linear operating power levels are required. These  
attenuators are ideal for gain control in multi-channel  
digital communications systems.  
Absolute Maximum Ratings 1  
Parameter  
Absolute Maximum  
Max. Input Power  
50 - 500 MHz  
500 - 1000 MHz  
Voltages  
+24 dBm  
+30 dBm  
VCC  
-1 V to +7.0 V  
-1 V to +15 V  
-40°C to +85°C  
Package outline conforms to JEDEC standard MS-013AA.  
Control Voltage  
Operating Temperature  
Storage Temperature  
-65°C to +125°C  
1. Operation of this device above any one of these parameters  
may cause permanent damage.  
Electrical Specifications2: TA = 25°C  
Parameter  
Test Conditions  
Frequency  
Units  
Min  
Typical  
Max  
Insertion Loss  
Vcont.: +10 V  
50 - 1000 MHz  
dB  
2.4  
2.8  
Dynamic Range  
Vcont.: 0 V  
50 - 1000 MHz  
dB  
33  
42  
Attenuation  
Flatness  
Attenuation: 0 to 20 dB  
Attenuation: 20 to 30 dB  
50 - 1000 MHz  
50 - 1000 MHz  
dB  
dB  
1.0  
1.5  
1.5  
2.0  
VSWR  
Vcont.: 0 - 10V  
50 - 1000 MHz  
Ratio  
1.7:1  
2.1:1  
Trise, Tfall  
Ton, Toff  
Transients  
10%/90%, 90%/10%  
50% Cntl to 90%/10% RF  
In-band  
µS  
µS  
mV  
10  
15  
150  
20  
25  
250  
1 dB  
Compression  
Vcont.: 0 - 10V  
100 MHz  
500 MHz  
1000 MHz  
dBm  
dBm  
dBm  
10  
17  
21  
13  
20  
24  
Input IP3  
Vcont.: 0 - 10V  
Two-tone inputs up to +10  
dBm  
100 MHz  
1000 MHz  
dBm  
dBm  
24  
34  
27  
37  
VCC  
I CC  
VCC = 5.25 V  
V
+4.75  
+5.0  
2
+5.25  
2.5  
DC  
DC  
mA  
mA  
Control Current  
2.7  
3.5  
2. Unit requires external .01 µF DC Blocks on RF lines.  

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