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ASS030NE8G1H PDF预览

ASS030NE8G1H

更新时间: 2024-10-31 17:15:19
品牌 Logo 应用领域
安森德 - ASDsemi /
页数 文件大小 规格书
12页 2334K
描述
N-MOS SGT

ASS030NE8G1H 数据手册

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ASS030NE8G1H  
85V N-Channel MOSFET  
Product Summary  
Features  
l Fast Switching  
VDS  
V
85  
2.3  
180  
l Low On-Resistance  
l Low Gate Charge  
RDS(on),Typ @VGS  
ID  
=10V  
m  
l
Low Reverse transfer capacitances  
High avalanche ruggedness  
RoHS product  
A
l
l
Applications  
l BMS  
l Motor drivers  
TO-263  
ABSOLUTE RATINGS  
at TC=25°Cunless otherwise specified  
Symbol  
VDSS  
Parameter  
Rating  
Units  
Drain-Source Voltage  
85  
V
Continuous Drain Current, Silicon Limited  
Continuous Drain Current, Package Limited  
Continuous Drain Current @TC=100°C , Silicon Limited  
Pulsed Drain Current  
275  
A
180  
A
ID  
173.9  
A
Note1  
720  
A
IDM  
Gate-Source Voltage  
±20  
V
VGS  
Note2  
Avalanche Energy  
900  
mJ  
W
EAS  
Power Dissipation  
357  
2.85  
PD  
Derating Factor above 25°C  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
15055 to 150  
260  
TJTstg  
TL  
Note1Repetitive RatingPulse width limited by maximum junction temperature  
Note2L=0.5mH, Ias=60A, Start TJ =25  
Thermal characteristics  
Symbol  
RθJC  
Parameter  
Max  
0.35  
62.5  
Units  
/W  
thermal resistance, Junction-Case  
thermal resistance, Junction-Ambient  
/W  
RθJA  
www.ascendsemi.com  
0755-86970486  
NOV 2022 Version1.0  
1/12  

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