Datasheet > ASS065NE8P3N

ASS065NE8P3N

更新时间： 2024-10-31 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
11页	1704K
描述
TO-220

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中文翻译

获取价格

数据手册

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ASS065NE8P3N 数据手册

ASS065NE8P3N

85V N-Channel MOSFET

Features

Product Summary

Fast Switching

5.8

118

mΩ

Low On-Resistance

Low Gate Charge

Low Reverse transfer capacitances

High avalanche ruggedness

RoHS product

RDS(on),Typ@VGS=10 V

Application

Switching applications

l Motor drivers

ABSOLUTE RATINGS

at T_C=25°C，unless otherwise specified

Symbol

V_DSS

Parameter

Rating

Units

Drain-Source Voltage

Continuous Drain Current, Silicon Limited

Continuous Drain Current @T_C=100°C , Silicon Limited

Pulsed Drain Current

118

I_D

Note1

320

I_DM

Gate-Source Voltage

±20

196

V_GS

Note2

Avalanche Energy

E_AS

Power Dissipation

156.2

P_D

Derating Factor above 25°C

1.25

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

150，–55 to 150

260

T_J，T_stg

T_L

Note1：Repetitive Rating：Pulse width limited by maximum junction temperature

Note2：L=0.5mH, Ias=28A, Start T_J=25℃

Thermal characteristics

Symbol

R_θJC

Parameter

Max

0.8

Units

℃/W

thermal resistance, Junction-Case

thermal resistance, Junction-Ambient

62.5

℃/W

R_θJA

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Sep 2022 Version1.0

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中文翻译

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