Datasheet > ASDM40R065NE

ASDM40R065NE

更新时间： 2024-10-31 17:15:55

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	1128K
描述
PDFN3*3-8

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中文翻译

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数据手册

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ASDM40R065NE 数据手册

ASDM40R065NE

40V N-Channel Power MOSFET

Product Summary

Features

Enhancementmode

V DS

mΩ

FastSwit chingandHigheffici ency

100%Aval anchetest

R DS(on),Typ@ VGS=10 V

I D

5.8

PDFN3.3*3.3-8

Maximum ratings, at TA =25°C, unless otherwise specified

Symbol

V(BR)DSS

VGS

Parameter

Rating

Unit

Drain-Source breakdown voltage

Gate-Source voltage

±20

=25°C

=100C

=25°C

T_C

Diode continuous forward current

Continuous drain current @VGS=10V

160

IDM

Pulse drain current tested ①

EAS

Avalanche energy, single pulsed ②

=25°C

T_C

Maximum power dissipation

=100°C

Storage and Junction Temperature Range

-55 to 150

°C

TSTG^,TJ

Thermal Characteristics

Symbol

RθJC

Parameter

Max

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

3.4

RθJA

Jul 2022 Version 2.0

1/7

12 3 4 5 6 7

中文翻译

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