Datasheet > ASDM20N90Q

ASDM20N90Q

更新时间： 2024-05-23 22:23:40

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
5页	267K
描述
PDFN5*6-8

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中文翻译

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数据手册

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ASDM20N90Q 数据手册

ASDM20N90Q

20V N-CHANNEL MOSFET

Feature

Product Summary

• 100% EAS Guaranteed

V DS

1.5

mΩ

• Green Device Available

RDS(on),TYP@VGS=10V

RDS(on),TYP@VGS=4.5V

• Super Low Gate Charge

1.8

• Excellent CdV/dt effect decline

• Advanced high cell density Trench technology

Application

• Power Management in Inverter System

top view

PDFN5*6-8

Maximum ratings, at T A=25 °C, unless otherwise specified

Symbol

Parameter

Rating

Unit

Drain-Source breakdown voltage

V_DS

I_S

Diode continuous forward current

TC=25°C

=25°C

①

I_D

Continuous drain current @VGS=10V

=100°C

=25°C

I_DM

T_A

360

105

Pulse drain current tested

Avalanche energy, single pulsed ②

Maximum power dissipation

Gate-Source voltage

EAS

P_D

VGS

±20

MSL

Level 3

T_J

T_STG

Storage and junction temperature range

-55 to 150

°C

Thermal Characteristics

Symbol

Parameter

Typical

1.9

Unit

°C/W

R_θJꢀ

R_JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

°C/W

NOV 2019 Version 1.0

1/5

Ascend Semicondutor

12 3 4 5

中文翻译

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