Datasheet > ASDM20P50KQ

ASDM20P50KQ

更新时间： 2024-09-29 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	731K
描述
TO-252

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中文翻译

获取价格

数据手册

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ASDM20P50KQ 数据手册

ASDM20P50KQ

-20V P-Channel MOSFET

General Features

Product Summary

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

BVDSS

-20

6.3

-50

mΩ

RDS(on)Typ.@VGS=-4.5V

Application

● Load switch

● Battery protection

Schematic diagram

TO-252-2L top view

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±12

V^GS

-50

-35

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100 )℃

I_DM

-200

Maximum Power Dissipation

Derating factor

P_D

0.64

W/℃

℃

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

1.6

Ascend Semicondutor Co.,Ltd

DEC 2018 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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