Datasheet > ASDM20P13S

ASDM20P13S

更新时间： 2024-05-23 22:22:02

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	1295K
描述
SOP-8

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中文翻译

获取价格

数据手册

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ASDM20P13S 数据手册

ASDM20P13S

-20V P-Channel MOSFET

Product Summary

Features

● Advance high cell density Trench technology

●Low R_DS(ON)to minimize conductive loss

●Low Gate Charge for fast switching

●Low Thermal resistance

BVDSS

-20

4.5

RDS(on),Typ@VGS=-

mΩ

7.7

-13

Application

●MB/VGA Vcore

●SMPS 2^ndSynchronous Rectifier

●POL application

●BLDC Motor driver

SOP-8

Absolute Maximum Ratings（T_C=25℃）

Parameter

Symbol

V_DS

Rating

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

-13

I_D@T_C=25℃

I_D@T_C=75℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

-8.36

-6.93

-52

①

Pulsed Drain Current

②

3.6

℃

Total Power Dissipation

P_D@T_C=25℃

P_D@T_A=25℃

T _J

Total Power Dissipation

0.69

Operating Junction Temperature

Storage Temperature

-55 to 150

T_STG

Single Pulse Avalanche Energy

E_AS

Thermal resistance

Parameter

Symbol

Unit

Min. Typ. Max.

②

Thermal resistance, junction - case

RthJC

RthJA

C/W

Thermal resistance, junction - ambient

C/W

www.ascendsemi.com

0755-86970486

NOV 2019 Version1.0

1/7

12 3 4 5 6 7

中文翻译

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