Datasheet > ASDM120R065NQ

ASDM120R065NQ

更新时间： 2024-05-23 22:22:28

品牌	Logo	应用领域
安森德 - ASDsemi		光电二极管
页数	文件大小	规格书
7页	700K
描述
PDFN5*6-8

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中文翻译

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ASDM120R065NQ 数据手册

ASDM120R065NQ

120V N-Channel Power MOSFET

Product Summary

General Features

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150°C operating temperature

● Pb-free lead plating

V DS

120

4.3

mΩ

R DS(on),Typ@ VGS=10 V

I D

Application

● DC/DC Converter

● Ideal for high-frequency switching and synchronous

rectification

DFN5*6-8

N-Channel

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

120

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

360

Maximum Power Dissipation

130

P_D

Derating factor

Single pulse avalanche energy ^{(Note 4)}

1.04

W/℃

℃

E_AS

400

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

R_θJA

0.92

℃/W

Thermal Resistance,Junction-to-Ambient

Jul 2022 Version 1.0

1/7

12 3 4 5 6 7

中文翻译

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