Datasheet > ASDM150R260NKQ

ASDM150R260NKQ

更新时间： 2024-05-23 22:22:03

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
8页	1446K
描述
TO-252

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中文翻译

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数据手册

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ASDM150R260NKQ 数据手册

ASDM150R260NKQ

150V N-Channel Power MOSFET

Feature

Product Summary

◇Special process technology for high ESD capability

◇High density cell design for ultra low Rdson

◇Fully characterized avalanche voltage and current

◇Good stability and uniformity with high EAS

◇Excellent package for good heat dissipation

V DS

150

mΩ

R DS(on),Max@ VGS=10 V

I D

Application

◇Power switching application

◇Hard switched and high frequency circuits

◇Power Tools

◇UPS

◇Motor Control

TO-252

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Symbol

Parameter

Limit

150

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

VDS

±20

VGS

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(TC=100℃)

Pulsed Drain Current

Maximum Power Dissipation

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.57

256

W/℃

℃

E_AS

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

R_θJC

Thermal Resistance, Junction-to-Case ^{(Note 2)}

1.8

℃/W

www.ascendsemi.com

0755-86970486

May 2019 Version1.0

1/8

12 3 4 5 6 7 8

中文翻译

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