Datasheet > ASDM15GN65TE

ASDM15GN65TE

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
7页	551K
描述
DFN8*8

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中文翻译

获取价格

数据手册

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ASDM15GN65TE 数据手册

ASDM15GN65TE

650V N-Channel Power MOSFET

Product Summary

Features

 Low On-resistance

V DS

650

100

 Low gate charge

R DS(on),TYP@ VGS=6 V

I D

mΩ

 Low intrinsic capacitance

 Extremely fast switching

Applications

 Resonant soft switching Converters

 Switch Mode Power Supplies

 Isolated DC/DC converters

DFN 8x8

Absolute Maximum Ratings(T_c=25℃ unless otherwise specified) Parameter

Symbol

Value

Unit

Test Condition

Drain-source voltage

650

Gate-source voltage

-10 to +7

T_C=25 C

Continuous drain current

I_D

T_C=100 C

-55 to 150

Operation and storage temperature

Tstg

NOV 2018 Version1.0

1/7

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7

中文翻译

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