Datasheet > ASDM11GN65TE

ASDM11GN65TE

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
安森德 - ASDsemi		/
页数	文件大小	规格书
12页	2889K
描述
DFN8*8

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中文翻译

获取价格

数据手册

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ASDM11GN65TE 数据手册

ASDM11GN65TE

650V N-Channel Power MOSFET

Features

Product Summary

• Easy to use, compatible with standard gate

• Superior reliability with BV_DSSover 1500V

• Excellent Q_gx R_DS(on)figure of merit (FOM)

• Low Q_rr, no free-wheeling diode required

• Low switching loss

drivers

VDS

mΩ

650

270

RDS(on),Max @VGS= 8V

• RoHS compliant and Halogen-free

Application

• High efficiency power supplies

• High efficiency USB PD

adapters

• Other consumer electronics

Maximum ratings, at T_C=25 °C, unless otherwise specified

Symbol

Parameter

Limit Value

Unit

Continuous drain current @T_C=25°C

Continuous drain current @T_C=100°C

I_D

Pulsed drain current @T_C=25°C (pulse width:

10us)

I_DM

Pulsed drain current @T_C=150°C (pulse width:

10us)

V_DSS

V_GSS

P_D

650

±20

Drain to source voltage (T_J= -55°C to 150°C)

Gate to source voltage

°C

Maximum power dissipation @T_C=25°C

T_C

-55 to 150

260

Case

Operating temperature

Junction

T_J

T_S

Storage temperature

T_CSOLD

Soldering peak temperature

Thermal Resistance

Symbol

Parameter

Typical

Unit

R^ΘJC

Junction-to-case

2.5

°C/W

R^ΘJA

Junction-to-ambient

°C/W

Notes:

a. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm²

copper area and 70µm thickness)

Aug 2021 Version1.0

1/12

Ascend Semicondutor Co.,Ltd

12 3 4 5 6 7...12

中文翻译

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