5秒后页面跳转
AS8SLC512K32Q1-20/883C PDF预览

AS8SLC512K32Q1-20/883C

更新时间: 2022-12-01 20:26:05
品牌 Logo 应用领域
MICROSS 静态存储器
页数 文件大小 规格书
12页 186K
描述
SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68

AS8SLC512K32Q1-20/883C 数据手册

 浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第1页浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第3页浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第4页浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第5页浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第6页浏览型号AS8SLC512K32Q1-20/883C的Datasheet PDF文件第7页 
SRAM  
AS8SLC512K32  
ABSOLUTE MAXIMUM RATINGS*  
This is a stress rating only and functional operation on the  
device at these or any other conditions above those indicated  
in the operational sections of this specication is not implied.  
Exposure to absolute maximum rating conditions for extended  
periods may affect reliability.  
**Junction temperature depends upon package type, cycle  
time, loading, ambient temperature and airow. See the Ap-  
plication Information section at the end of this datasheet for  
more information.  
Voltage of Vcc Supply Relative to Vss...........-0.5V to +4.6V  
Storage Temperature.....................................-65°C to +150°C  
Short Circuit Output Current(per I/O)............................20mA  
Voltage on Any Pin Relative to Vss............-.5V to Vcc+4.6V  
Maximum Junction Temperature**.............................+150°C  
*Stresses greater than those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS  
(-55oC < TA < 125oC and -40oC to +85oC; Vcc = 3.3V ±0.3V)  
DESCRIPTION  
CONDITIONS  
SYMBOL MIN  
MAX UNITS NOTES  
Input High (logic 1) Voltage  
2.2  
-0.3  
-10  
-10  
V
V
1
1
VIH  
VIL  
ILI1  
ILI2  
V
CC+0.3  
Input Low (logic 1) Voltage  
Input Leakage CurrentADD,OE  
Input Leakage CurrentWE,CE  
0.8  
10  
μA  
μA  
0V<VIN<VCC  
10  
Output(s) Disabled  
0V<VOUT<VCC  
-10  
2.4  
10  
μA  
Output Leakage CurrentI/O  
ILO  
Output High Voltage  
Output Low Voltage  
V
V
1
1
I
OH=-4.0mA  
VOH  
VOL  
0.5  
IOL=8.0mA  
MAX  
-15  
DESCRIPTION  
CONDITIONS  
SYMBOL -10  
-12  
-17  
-20 UNITS NOTES  
CS\<VIL; VCC = MAX  
f = MAX = 1/ tRC (MIN)  
Outputs Open, OE\ = VIH  
High Speed  
Power Supply  
Current: Operating  
350  
320  
280  
260  
240  
mA 2, 3,13  
ICC1  
Low Power (L)  
280  
240  
---  
200  
---  
180  
---  
160  
---  
CS\<VIL; VCC = MAX  
f = 10 MHz, OE\ = VIH  
Low Speed  
Power Supply  
Current: Operating  
---  
ICC2  
mA  
mA  
2
2
Low Power (L)  
120  
80  
---  
80  
---  
80  
---  
80  
---  
40  
CS\<VIL; VCC = MAX  
f = 1 MHz, OE\ = VIH  
Low Speed  
Power Supply  
Current: Operating  
---  
ICC3  
Low Power (L)  
CS\>VIH; VCC = MAX  
f = MAX = 1/ tRC (MIN)  
Outputs Open, OE\=VIH  
80  
40  
40  
40  
100  
80  
80  
80  
80  
Power Supply  
Current: Standby  
ISBT1  
mA  
mA  
3, 13  
Low Power (L)  
80  
60  
60  
36  
60  
60  
36  
60  
60  
36  
60  
60  
36  
VIN = VCC - 0.2V, or VSS  
+0.2V  
80  
ISBT2  
CMOS Standby  
V
CC=Max; f = 0Hz  
Low Power (L)  
50  
Micross Components reserves the right to change products or specications without notice.  
AS8SLC512K32  
Rev. 2.6 01/10  
2

与AS8SLC512K32Q1-20/883C相关器件

型号 品牌 描述 获取价格 数据表
AS8SLC512K32Q1-20/IT MICROSS SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68

获取价格

AS8SLC512K32Q1-20/XT MICROSS SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68

获取价格

AS8SLC512K32Q1-20L/883C AUSTIN 512K x 32 SRAM SRAM Memory Array MCM

获取价格

AS8SLC512K32Q1-20L/IT AUSTIN 512K x 32 SRAM SRAM Memory Array MCM

获取价格

AS8SLC512K32Q1-20L/IT MICROSS SRAM Module, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68

获取价格

AS8SLC512K32Q1-20L/XT AUSTIN 512K x 32 SRAM SRAM Memory Array MCM

获取价格