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AS8SLC512K32Q1-20L/IT PDF预览

AS8SLC512K32Q1-20L/IT

更新时间: 2024-11-19 06:37:59
品牌 Logo 应用领域
AUSTIN 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 232K
描述
512K x 32 SRAM SRAM Memory Array MCM

AS8SLC512K32Q1-20L/IT 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:QFP
包装说明:QFP, QFP68,.99SQ,50针数:68
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.11
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:S-CQFP-G68
JESD-609代码:e0长度:22.352 mm
内存密度:16777216 bit内存集成电路类型:SRAM MODULE
内存宽度:32功能数量:1
端子数量:68字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX32输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFP
封装等效代码:QFP68,.99SQ,50封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
认证状态:Not Qualified座面最大高度:4.9784 mm
最大待机电流:0.036 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:22.352 mm
Base Number Matches:1

AS8SLC512K32Q1-20L/IT 数据手册

 浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第2页浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第3页浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第4页浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第5页浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第6页浏览型号AS8SLC512K32Q1-20L/IT的Datasheet PDF文件第7页 
SRAM  
AS8SLC512K32  
Austin Semiconductor, Inc.  
512K x 32 SRAM  
SRAM Memory Array MCM  
PIN ASSIGNMENT  
(TopView)  
68 Lead CQFP (Q & Q1)  
FEATURES  
Fast access times: 10, 12, 15, 17 and 20ns  
Fast OE\ access times: 6ns  
Ultra-low operating power < 1W worst case  
Single +3.3V 0.3V power supply  
Fully static -- no clock or timing strobes necessary  
All inputs and outputs are TTL-compatible  
Easy memory expansion with CE\ and OE\ options  
Automatic CE\ power down  
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61  
60  
10  
I/O 16  
I/O 17  
I/O 18  
I/O 19  
I/O 20  
I/O 21  
I/O 22  
I/O 23  
GND  
I/O 0  
I/O 1  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
GND  
I/O 8  
I/O 24  
I/O 25  
I/O 26  
I/O 27  
I/O 28  
I/O 29  
I/O 30  
I/O 31  
I/O 9  
I/O 10  
I/O 11  
I/O 12  
I/O 13  
I/O 14  
I/O 15  
High-performance, low-power consumption, CMOS  
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43  
OPTIONS  
MARKINGS  
Timing  
10ns  
12ns  
15ns  
17ns  
20ns  
66 Lead PGA (P)  
-10  
-12  
-15  
-17  
-20  
C S  
C S  
Package  
Ceramic Quad Flatpack  
Ceramic Quad Flatpak(.054min SO) Q1  
Pin Grid Array  
\
Q
No. 702  
No.904  
P
C S  
Operating Temperature Ranges  
Military (-55oC to +125oC)  
Industrial (-40oC to +85oC)  
C S  
XT  
IT  
2V data retention/low power  
L
GENERAL DESCRIPTION  
M4  
M3  
The Austin Semiconductor, Inc. AS8SLC512K32 is a 3.3V  
16 Megabit CMOS SRAM Module organized as 512Kx32 bits. The  
AS8SLC512K32 achieves very high speed access, low power  
consumption and high reliability by employing advanced CMOS  
memory technology.  
This military temperature grade product is ideally suited for  
commercial, industrial, and military applications when asynchronous high  
speed switching and low ACTIVE opening power & ultra Fast Asyn-  
chronous Access is mandated.  
M2  
M1  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
BLOCK DIAGRAM  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS8SLC512K32  
Rev. 2.5 5/09  
1

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