Datasheet > AS8E128K32N-140/883C

AS8E128K32N-140/883C

更新时间： 2022-12-18 04:16:54

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	283K
描述
128K x 32 EEPROM EEPROM Memory Array

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EEPROM

AS8E128K32

Austin Semiconductor, Inc.

Software Data Protection Disable

Algorithm⁽¹⁾

Software Data Protection Enable

Algorithm⁽¹⁾

Load Data >AA

Address >5555

Load Data AA

Address 5555

Load Data >55

Load Data 55

Address >2AAA

Address 2AAA

Load Data >80

Address >5555

Load Data A0

Writes Enabled⁽²⁾

Address 5555

Load Data >AA

Address >5555

Load Data XX

Load Data >55

Address >2AAA

Any Address⁽⁴⁾

Load Last Byte

Load Data >20

Address >5555

Enter Data

Last Address

Protect State

Load Data XX

Any Address (4)

NOTES:

;Exit Data Protect State⁽³⁾

1. Byte Data Format: I/O7 - I/O0, I/

Address Format: A14 - A0 (Hex)

2. Write Protect state will be active at end of write even if no other

data is loaded.

3. Write Protect state will be deactivated at end of period even if no

other data is loaded.

Load Last Byte(s)

Last Address

4. 1 to 128 bytes of data are loaded.

SOFTWARE PROTECTED PROGRAM CYCLE WAVEFORM^(1)(2)(3)

OE\

CE\

WPH

BLC

WE\

A0-A6

A7-A16

BYTE ADDRESS

5555

2AAA

5555

PAGE ADDRESS

DATA

BYTE 0

BYTE 126

BYTE 127

1. A0-A14 of the selected I/O bytes must conform to the addressing sequence for the first three bytes as shown above.

2. After the command sequence has been issued and a page write operation follows, the page address inputs (A7-A16) of the selected I/O bytes must be the same for each high to low transition

of WE\ (or CE\).

3. OE Must be high only when WE\ and CE\ are both low.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS8E128K32

Rev. 7.6 06/05

1...5 6 789 10 11...13

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