Datasheet > AS8E128K32N-140/883C

AS8E128K32N-140/883C

更新时间： 2022-12-18 04:16:54

品牌	Logo	应用领域
AUSTIN		存储可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	283K
描述
128K x 32 EEPROM EEPROM Memory Array

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EEPROM

AS8E128K32

Austin Semiconductor, Inc.

PAGE MODE CHARACTERISTICS

Symbol

t_AS, t_OES

t_AH

Parameter

Address, OE\ Set-Up time

Address, Hold time

Min

Max

Unit

t_CS

Chip Select Set-up Time

Chip Select Hold Time

Write Pulse Width (WE\ or CE\)

Data Set-up Time

t_CH

t_WP

100

t_DS

t_DH, t_OEH

Data, OE\ Hold Time

PAGE MODE WRITE WAVEFORMS^(1,2)

CE\

t_WP

tBLC

BLC

WE\

A0 - A16

DATA

t_AH

tAH

t_AS

tAS

t_DH

tDH

t_WC

t_DS

tDS

tWC

BYTE 0

BYTE 1

BYTE 2

BYTE 3

BYTE 126

BYTE127

NOTES: 1. A7 through A16 must specify the page address during each high to low transition of WE\ (or CE\).

2. OE\ must be high only when WE\ and CE\ are both low.

3. VD - Valid Data

4. VA - Valid Address

CHIP ERASE WAVEFORMS

VIH

CE\

VIL

OE\

VIH

WE\

t = 5 msec (min.)

VIL

= tH = 10 msec (min.)

V = 12.0V+0.5V

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS8E128K32

Rev. 7.6 06/05

1...4 5 678 9 10...13

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