Datasheet > AS7C33512PFS32A-225TQI

AS7C33512PFS32A-225TQI

更新时间： 2024-02-28 20:12:21

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
21页	463K
描述
Standard SRAM, 512KX32, 6.9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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AS7C33512PFS32A

AS7C33512PFS36A

TQFP and BGA thermal resistance

Description

Conditions

Symbol

Typical

Units

°C/ W

1–layer

4–layer

Thermal resistance

(junction to ambient)¹

Test conditions follow standard test methods

and procedures for measuring thermal

impedance, per EIA/ JESD51

Thermal resistance

°C/ W

(junction to top of case)¹

1 This parameter is sampled

Absolute maximum ratings

Parameter

Symbol

Min

–0.5

–

Max

Unit

Power supply voltage relative to GND

Input voltage relative to GND (input pins)

Input voltage relative to GND (I/ O pins)

Power dissipation

V_DD, V_DDQ

+4.6

V_DD+ 0.5

V_DDQ+ 0.5

1.8

P_d

I_OUT

_stg(TQFP)

^oC

Short circuit output current

Storage temperature (TQFP)

Storage temperature (BGA)

Temperature under bias

–

–65

+150

T_stg(BGA)

+125

T_bias

+135

Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional oper-

ation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions may affect reliability.

Recommended operating conditions at 3.3V I/ O

Parameter

Supply voltage for inputs

Supply voltage for I/ O

Ground supply

Symbol

V_DD

Min

3.135

Nominal

Max

3.465

Unit

3.3

V_DDQ

Vss

Recommended operating conditions at 2.5V I/ O

Parameter

Supply voltage for inputs

Supply voltage for I/ O

Ground supply

Symbol

V_DD

Min

3.135

2.375

Nominal

Max

3.465

2.625

Unit

3.3

2.5

V_DDQ

Vss

12/ 2/ 02, v. 0.9.8 Advance Info

Alliance Semiconductor

6 of 21

1...3 4 567 8 9...21

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