Datasheet > AS7C33512PFS18A2-133TQI

AS7C33512PFS18A2-133TQI

更新时间： 2024-11-28 03:35:31

品牌	Logo	应用领域
美国芯成 - ISSI		静态存储器
页数	文件大小	规格书
14页	370K
描述
Standard SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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中文翻译

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April 2002

Preliminary

AS7C33512PFS16A

AS7C33512PFS18A

3.3V 512K × 16/18 pipeline burst synchronous SRAM

Features

• Asynchronous output enable control

• Available in 100-pin TQFP and 119-ball BGA package

• Byte write enables

• Multiple chip enables for easy expansion

• 3.3V core power supply

• Organization: 524,288 words × 16 or 18 bits

• Fast clock speeds to 166 MHz in LVTTL/LVCMOS

• Fast clock to data access: 3.5/3.8/4.0/5.0 ns

• Fast OE access time: 3.5/3.8/4.0/5.0 ns

• Fully synchronous register-to-register operation

• Single register “Flow-through” option

• Single-cycle deselect

- Dual-cycle deselect also available (AS7C33512PFD16A/

AS7C33512PFD18A)

• 2.5V or 3.3V I/O operation with separate V

DDQ

• 30 mW typical standby power in power down mode

• NTD™ pipeline architecture available

(AS7C33512NTD16A/AS7C33512NTD18A)

• Available in both 2 chip enable and 3 chip enable

- 2 CE part number is AS7C33512PFS16A or AS7C33512PFS18A2

1. Pentium is a registered trademark of Intel Corporation. NTD™ is a

• Pentium® compatible architecture and timing

trademark of Alliance Semiconductor Corporation. All trademarks men-

tioned in this document are the property of their respective owners.

Logic block diagram

LBO

Burst logic

CLK

ADV

ADSC

ADSP

CLK

CLR

512K × 16/18

Memory

19 17

Addres^Qs

array

A[18:0]

CLK

16/18

GWE

DQb

Byte Write

registers

BWE

CLK

DQa

Byte Write

CLK

registers

CE0

CE1

CE2

^DEnable^Q

Input

Output

registers

CLK

^DEnable^Q

delay

Power

down

CLK

16/18

DQ[a,b]

Selection guide

–166

–150

6.6

–133

7.5

133

–100

Units

Minimum cycle time

Maximum pipelined clock frequency

Maximum pipelined clock access time

Maximum operating current

166

3.5

475

130

150

3.8

100

MHz

450

110

425

100

325

Maximum standby current

Maximum CMOS standby current (DC)

4/15/02; v.1.5

Alliance Semiconductor

1 of 14

12 3 4 5 6 7...14

中文翻译

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与AS7C33512PFS18A2-133TQI相关器件

型号	品牌	获取价格	描述	数据表
AS7C33512PFS18A2-150BI	ISSI	获取价格	SRAM
AS7C33512PFS18A2-150TQC	ISSI	获取价格	Standard SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33512PFS18A2-150TQI	ISSI	获取价格	Standard SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33512PFS18A2-166BI	ISSI	获取价格	SRAM
AS7C33512PFS18A2-166TQC	ISSI	获取价格	Standard SRAM, 512KX18, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33512PFS18A2-166TQI	ISSI	获取价格	Standard SRAM, 512KX18, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
AS7C33512PFS32A	ALSC	获取价格	3.3V 512K x 32/36 pipelined burst synchronous SRAM
AS7C33512PFS32A-133BCN	ALSC	获取价格	Standard SRAM, 512KX32, 10ns, CMOS, PBGA165, LEAD FREE, BGA-165
AS7C33512PFS32A-133TQC	ALSC	获取价格	3.3V 512K x 32/36 pipelined burst synchronous SRAM
AS7C33512PFS32A-133TQCN	ALSC	获取价格	3.3V 512K x 32/36 pipelined burst synchronous SRAM

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