5秒后页面跳转
AS7C33512PFD36A-133TQC PDF预览

AS7C33512PFD36A-133TQC

更新时间: 2024-02-22 07:10:24
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
19页 542K
描述
3.3V 512K x 32/36 pipelined burst synchronous SRAM

AS7C33512PFD36A-133TQC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.52
Is Samacsys:N最长访问时间:3.8 ns
其他特性:PIPELINED ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:18874368 bit内存集成电路类型:STANDARD SRAM
内存宽度:36功能数量:1
端子数量:100字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C33512PFD36A-133TQC 数据手册

 浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第3页浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第4页浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第5页浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第7页浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第8页浏览型号AS7C33512PFD36A-133TQC的Datasheet PDF文件第9页 
AS7C33512PFD32A  
AS7C33512PFD36A  
®
Write enable truth table (per byte)  
Function  
GWE BWE  
BWa  
X
BWb  
X
BWc  
BWd  
X
L
H
H
H
H
H
X
L
L
L
H
L
X
L
Write All Bytes  
L
L
L
Write Byte a  
L
H
H
L
H
Write Byte c and d  
H
H
L
X
X
X
H
X
Read  
H
H
H
Key: X = don’t care, L = low, H = high, n = a, b, c, d; BWE, BWn = internal write signal.  
Asynchronous Truth Table  
Operation  
Snooze mode  
ZZ  
H
L
OE  
X
I/O Status  
High-Z  
L
Dout  
Read  
L
H
High-Z  
Write  
L
X
Din, High-Z  
High-Z  
Deselected  
L
X
Notes:  
1. X means “Don’t Care”  
2. ZZ pin is pulled down internally  
3. For write cycles that follows read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur.  
4. Snooze mode means power down state of which stand-by current does not depend on cycle times  
5. Deselected means power down state of which stand-by current depends on cycle times  
Burst sequence table  
Interleaved burst address (LBO = 1)  
Linear burst address (LBO = 0)  
A1 A0  
0 0  
A1 A0  
0 1  
A1 A0  
1 0  
A1 A0  
1 1  
A1 A0  
0 0  
A1 A0  
0 1  
A1 A0  
1 0  
A1 A0  
1 1  
Starting Address  
First Increment  
Second Increment  
Third Increment  
Starting Address  
First Increment  
Second Increment  
Third Increment  
0 1  
0 0  
1 1  
1 0  
0 1  
1 0  
1 1  
0 0  
1 0  
1 1  
0 0  
0 1  
1 0  
1 1  
0 0  
0 1  
1 1  
1 0  
0 1  
0 0  
1 1  
1 0  
0 1  
1 0  
2/10/05, v 1.3  
Alliance Semiconductor  
6 of 19  

与AS7C33512PFD36A-133TQC相关器件

型号 品牌 描述 获取价格 数据表
AS7C33512PFD36A-133TQCN ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格

AS7C33512PFD36A-133TQI ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格

AS7C33512PFD36A-133TQIN ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格

AS7C33512PFD36A-166TQC ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格

AS7C33512PFD36A-166TQCN ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格

AS7C33512PFD36A-166TQI ALSC 3.3V 512K x 32/36 pipelined burst synchronous SRAM

获取价格