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AS7C33512PFD32A-166TQC PDF预览

AS7C33512PFD32A-166TQC

更新时间: 2024-01-08 00:28:56
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
19页 542K
描述
3.3V 512K x 32/36 pipelined burst synchronous SRAM

AS7C33512PFD32A-166TQC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.66
最长访问时间:3.4 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM内存宽度:32
功能数量:1端子数量:100
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX32
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

AS7C33512PFD32A-166TQC 数据手册

 浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第1页浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第3页浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第4页浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第5页浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第6页浏览型号AS7C33512PFD32A-166TQC的Datasheet PDF文件第7页 
AS7C33512PFD32A  
AS7C33512PFD36A  
®
16 Mb Synchronous SRAM products list1,2  
Org  
Part Number  
Mode  
PL-SCD  
PL-SCD  
PL-SCD  
PL-DCD  
PL-DCD  
PL-DCD  
FT  
Speed  
1MX18  
512KX32  
512KX36  
1MX18  
512KX32  
512KX36  
1MX18  
512KX32  
512KX36  
1MX18  
512KX32  
512KX36  
1MX18  
512KX32  
512KX36  
AS7C331MPFS18A  
AS7C33512PFS32A  
AS7C33512PFS36A  
AS7C331MPFD18A  
AS7C33512PFD32A  
AS7C33512PFD36A  
AS7C331MFT18A  
AS7C33512FT32A  
AS7C33512FT36A  
AS7C331MNTD18A  
AS7C33512NTD32A  
AS7C33512NTD36A  
AS7C331MNTF18A  
AS7C33512NTF32A  
AS7C33512NTF36A  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
166/133 MHz  
166/133 MHz  
166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
FT  
FT  
NTD-PL  
NTD-PL  
NTD-PL  
NTD-FT  
NTD-FT  
NTD-FT  
1 Core Power Supply: VDD = 3.3V + 0.165V  
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O  
VDDQ = 2.5V + 0.125V for 2.5V I/O  
PL-SCD  
PL-DCD  
FT  
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect  
Pipelined Burst Synchronous SRAM - Double Cycle Deselect  
Flow-through Burst Synchronous SRAM  
1
TM  
NTD -PL  
:
:
Pipelined Burst Synchronous SRAM with NTD  
TM  
NTD-FT  
Flow-through Burst Synchronous SRAM with NTD  
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of  
their respective owners.  
2/10/05, v 1.3  
Alliance Semiconductor  
2 of 19  

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