AS7C33256PFD32A
AS7C33256PFD36A
®
TQFP thermal resistance
Description
Conditions
Symbol
θJA
Typical
40
1–layer
4–layer
Thermal resistance
(junction to ambient)*
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
θJA
22
Thermal resistance
θJC
8
(junction to top of case)*
* This parameter is sampled.
DC electrical characteristics
–2001
–183
–166
–133
–100
Parameter
Symbol
|ILI|
Test conditions
Min Max Min Max Min Max Min Max Min Max Unit
Input leakage
current2
VDD = Max, VIN = GND to VDD
OE ≥ VIH, VDD = Max,
–
–
2
2
–
–
2
2
–
–
2
2
–
–
2
2
–
–
2
2
µA
µA
Output leakage
current
|ILO|
V
OUT = GND to VDD
Operating
power supply
current
CE0 = VIL, CE1 = VIH, CE2 =
VIL,
ICC
ISB
ISB1
–
570
–
540
–
475
–
425
–
325 mA
90
f = fMax, IOUT = 0 mA
Deselected, f = fMax, ZZ ≤ VIL
–
–
160
30
–
–
140
30
–
–
130
30
–
–
100
30
–
–
Deselected, f = 0, ZZ ≤ 0.2V
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
Standby power
supply current
mA
Deselected, f = f , ZZ
≥
V
–
DD
Max
ISB2
0.2V
–
–
30
–
30
–
30
–
30
–
30
All VIN ≤ VIL or ≥ VIH
VOL
IOL = 8 mA, VDDQ = 3.465V
0.4
–
–
0.4
–
–
0.4
–
–
0.4
–
–
0.4
V
Output voltage
VOH
IOH = –4 mA, VDDQ = 3.135V 2.4
2.4
2.4
2.4
2.4
–
1 Shading indicates future availability.
2 LBO pin has an internal pull-up and input leakage = 10 µA.
Note: ICC given with no output loading. ICC increases with faster cycles times and greater output loading.
DC electrical characteristics for 2.5V I/O operation
–200
–183
–166
–133
–100
Parameter
Symbol
Test conditions
Min Max Min Max Min Max Min Max Min Max Unit
Output leakage
current
OE ≥ VIH, VDD = Max,
|ILO
|
–1
1
–1
1
–1
1
–1
1
–1
1
µA
V
V
OUT = GND to VDD
VOL
IOL = 2 mA, VDDQ = 2.65V
IOH = –2 mA, VDDQ = 2.35V
–
0.7
–
–
0.7
–
–
0.7
–
–
0.7
–
–
0.7
–
Output voltage
VOH
1.7
1.7
1.7
1.7
1.7
5/25/01; v.0.9.1
Alliance Semiconductor
P. 5 of 11