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AS7C33256PFD36A-183TQI PDF预览

AS7C33256PFD36A-183TQI

更新时间: 2024-10-29 04:06:51
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器
页数 文件大小 规格书
11页 332K
描述
Cache SRAM, 256KX36, 3.1ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C33256PFD36A-183TQI 数据手册

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AS7C33256PFD32A  
AS7C33256PFD36A  
®
TQFP thermal resistance  
Description  
Conditions  
Symbol  
θJA  
Typical  
40  
1–layer  
4–layer  
Thermal resistance  
(junction to ambient)*  
Test conditions follow standard test methods and  
procedures for measuring thermal impedance,  
per EIA/JESD51  
θJA  
22  
Thermal resistance  
θJC  
8
(junction to top of case)*  
* This parameter is sampled.  
DC electrical characteristics  
–2001  
–183  
–166  
–133  
–100  
Parameter  
Symbol  
|ILI|  
Test conditions  
Min Max Min Max Min Max Min Max Min Max Unit  
Input leakage  
current2  
VDD = Max, VIN = GND to VDD  
OE VIH, VDD = Max,  
2
2
2
2
2
2
2
2
2
2
µA  
µA  
Output leakage  
current  
|ILO|  
V
OUT = GND to VDD  
Operating  
power supply  
current  
CE0 = VIL, CE1 = VIH, CE2 =  
VIL,  
ICC  
ISB  
ISB1  
570  
540  
475  
425  
325 mA  
90  
f = fMax, IOUT = 0 mA  
Deselected, f = fMax, ZZ VIL  
160  
30  
140  
30  
130  
30  
100  
30  
Deselected, f = 0, ZZ 0.2V  
all VIN 0.2V or VDD – 0.2V  
30  
Standby power  
supply current  
mA  
Deselected, f = f , ZZ  
V
DD  
Max  
ISB2  
0.2V  
30  
30  
30  
30  
30  
All VIN VIL or VIH  
VOL  
IOL = 8 mA, VDDQ = 3.465V  
0.4  
0.4  
0.4  
0.4  
0.4  
V
Output voltage  
VOH  
IOH = –4 mA, VDDQ = 3.135V 2.4  
2.4  
2.4  
2.4  
2.4  
1 Shading indicates future availability.  
2 LBO pin has an internal pull-up and input leakage = 10 µA.  
Note: ICC given with no output loading. ICC increases with faster cycles times and greater output loading.  
DC electrical characteristics for 2.5V I/O operation  
–200  
–183  
–166  
–133  
–100  
Parameter  
Symbol  
Test conditions  
Min Max Min Max Min Max Min Max Min Max Unit  
Output leakage  
current  
OE VIH, VDD = Max,  
|ILO  
|
–1  
1
–1  
1
–1  
1
–1  
1
–1  
1
µA  
V
V
OUT = GND to VDD  
VOL  
IOL = 2 mA, VDDQ = 2.65V  
IOH = –2 mA, VDDQ = 2.35V  
0.7  
0.7  
0.7  
0.7  
0.7  
Output voltage  
VOH  
1.7  
1.7  
1.7  
1.7  
1.7  
5/25/01; v.0.9.1  
Alliance Semiconductor  
P. 5 of 11  

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