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AS7C251MNTD36A-133TQI PDF预览

AS7C251MNTD36A-133TQI

更新时间: 2024-01-08 22:34:39
品牌 Logo 应用领域
ALSC 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
18页 436K
描述
2.5V 1M x 32/36 Pipelined SRAM with NTD

AS7C251MNTD36A-133TQI 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.38
最长访问时间:3.8 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:37748736 bit
内存集成电路类型:ZBT SRAM内存宽度:36
功能数量:1端子数量:100
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX36
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

AS7C251MNTD36A-133TQI 数据手册

 浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第4页浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第5页浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第6页浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第8页浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第9页浏览型号AS7C251MNTD36A-133TQI的Datasheet PDF文件第10页 
AS7C251MNTD32A  
AS7C251MNTD36A  
®
State diagram for NTD SRAM  
Burst  
Read  
Burst  
Read  
Read  
Burst  
Read  
Dsel  
Dsel  
Burst  
Burst  
Write  
Burst  
Write  
Burst  
Write  
Write  
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
Min  
Max  
+3.6  
Unit  
V
VDD, VDDQ  
VIN  
–0.3  
–0.3  
–0.3  
VDD + 0.3  
VDDQ + 0.3  
1.8  
V
VIN  
V
Pd  
W
Short circuit output current  
IOUT  
Tstg  
20  
mA  
oC  
oC  
Storage temperature  
–65  
–65  
+150  
Temperature under bias  
Tbias  
+135  
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions may affect reliability.  
Recommended operating conditions  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
2.375  
2.375  
0
Nominal  
Max  
2.625  
2.625  
0
Unit  
V
2.5  
2.5  
0
VDDQ  
Vss  
V
V
1/17/05, V 1.2  
Alliance Semiconductor  
P. 7 of 18  

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