Datasheet > AS7C251MNTD36A-133BCN

AS7C251MNTD36A-133BCN

更新时间： 2022-12-01 20:11:57

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
22页	453K
描述
ZBT SRAM, 1MX36, 10ns, CMOS, PBGA165, LEAD-FREE, BGA-165

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AS7C251MNTD32A

AS7C251MNTD36A

State diagram for NTD SRAM

Burst

Read

Burst

Read

Burst

Read

Dsel

Burst

Write

Burst

Write

Burst

Write

Absolute maximum ratings

Parameter

Power supply voltage relative to GND

Input voltage relative to GND (input pins)

Input voltage relative to GND (I/O pins)

Power dissipation

Symbol

Min

Max

+3.6

Unit

V_DD, V_DDQ

V_IN

–0.3

–

V_DD+ 0.3

V_DDQ+ 0.3

1.8

V_IN

P_d

Short circuit output current

I_OUT

–

^oC

Storage temperature (TQFP)

Storage temperature (BGA)

T_stg(TQFP)

T_stg(BGA)

T_bias

–65

+150

+125

Temperature under bias

+135

Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional

operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to

absolute maximum rating conditions may affect reliability.

Recommended operating conditions

Parameter

Supply voltage for inputs

Supply voltage for I/O

Ground supply

Symbol

V_DD

Min

2.375

Nominal

Max

2.625

Unit

2.5

V_DDQ

Vss

4/26/04, V 1.0

Alliance Semiconductor

P. 7 of 22

1...4 5 678 9 10...22

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