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AS6UB51216-70TC PDF预览

AS6UB51216-70TC

更新时间: 2024-02-10 18:56:56
品牌 Logo 应用领域
ALSC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 184K
描述
Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

AS6UB51216-70TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:44Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:70 ns
JESD-30 代码:R-PDSO-G44长度:18.41 mm
内存密度:8388608 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

AS6UB51216-70TC 数据手册

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AS6UB51216  
&
ꢓꢒꢊꢄꢔꢈꢄꢐꢍꢂꢁ  
Supply  
CS  
H
L
CS2  
X
WE  
X
OE  
X
LB  
X
H
X
L
UB  
X
H
X
H
L
Current I/O1–I/O8 I/O9–I/O16  
Mode  
ISB  
High Z  
High Z  
Standby (ISB)  
L
X
X
L
X
H
H
ICC  
High Z  
DOUT  
High Z  
DOUT  
DIN  
High Z  
High Z  
DOUT  
DOUT  
High Z  
DIN  
Output disable (ICC)  
L
L
H
H
H
L
L
H
L
ICC  
Read (ICC)  
Write (ICC)  
L
L
H
L
X
H
L
ICC  
High Z  
DIN  
L
DIN  
Key: X = Don’t care, L = Low, H = High.  
ꢕꢖꢈꢗꢁꢃꢆꢏꢏꢁꢇꢋꢁꢋꢈꢆꢘꢁꢒꢐꢄꢅꢇꢉꢈꢃꢆꢇꢋꢅꢄꢅꢆꢇꢈꢙꢆꢚꢁꢒꢈꢄꢔꢁꢈꢆꢘꢁꢒꢐꢄꢅꢇꢉꢈꢒꢐꢇꢉꢁꢛ  
Parameter  
Vcc  
Description  
Test Conditions  
Min  
Max  
Unit  
V
Supply voltage  
-
2.7  
2.4  
3.3  
VOH  
VOL  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input Load Current  
Output Load Current  
IOH = –1.0mA  
V
IOL = 2.1mA  
0.4  
VCC + 0.2  
0.6  
V
VIH  
-
2.2  
–0.2  
–1  
V
VIL  
-
V
IIX  
GND < VIN < VCC  
+1  
µA  
µA  
IOZ  
GND < VO < VCC; Outputs High Z  
–1  
+1  
IOUT = 0mA,  
f = 0  
ICC  
VCC Operating Supply Current  
3
4
mA  
mA  
Average VCC Operating Supply  
Current at 1 MHz  
IOUT = 0mA,  
f =1MHz  
I
CC1 @ 1 MHz  
30 mA at 55ns  
40 mA at 70ns  
Average VCC Operating Supply  
Current  
ICC2  
I
OUT = 0mA, f = fMax  
mA  
CS1 > VCC – 0.2V or CS2< 0.2V or UB  
= LB  
> VIH, other inputs = VIL or VIH, f = 0  
CS Power Down Current; TTL  
Inputs  
ISB  
300  
20  
µA  
CS1 > VCC – 0.2V or CS2< 0.2V  
UB = LB > VCC – 0.2V  
other inputs = 0V – VCC, f = fMax  
CS Power Down Current; CMOS  
Inputs  
ISB1  
µA  
ꢀꢁ  
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)  
a
CC  
Signals  
Parameter  
Input capacitance  
Symbol  
CIN  
Test conditions  
VIN = 0V  
Max  
5
Unit  
pF  
A, CS, WE, OE, LB, UB  
I/O  
I/O capacitance  
CI/O  
VIN = VOUT = 0V  
7
pF  
10/30/01; V.0.9.2  
Alliance Semiconductor  
P. 3 of 11  

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