Datasheet > AS4DDR264M65PBG1

AS4DDR264M65PBG1

更新时间： 2024-11-11 06:37:51

品牌	Logo	应用领域
AUSTIN		动态存储器双倍数据速率
页数	文件大小	规格书
28页	242K
描述
64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit

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中文翻译

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数据手册

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AS4DDR264M65PBG1 数据手册

iPEM

4.2 Gb SDRAM-DDR2

Austin Semiconductor, Inc.

AS4DDR264M65PBG1

64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS

iNTEGRATED Plastic Encapsulated Microcircuit

BENEFITS

FEATURES

DDR2 Data rate = 667, 533, 400

58% Space Savings

Available in Industrial, Enhanced and Extended Temp

Package:

49% I/O reduction vs Individual CSP approach

Reduced part count

• Proprietary Enchanced Die Stacked iPEM

• 208 Plastic Ball Grid Array (PBGA), 16 x 23mm

• 1.00mm ball pitch

Reduced trace lengths for lower parasitic

capacitance

Suitable for hi-reliability applications

Upgradable to 128M x 64 density in future

Pin / Function equivalent to White

W3H64M64E-xSBx

Differential data strobe (DQS, DQS#) per byte

Internal, pipelined, double data rate architecture

4n-bit prefetch architecture

DLL for alignment of DQ and DQS transitions with

clock signal

Eightinternal banks for concurrent operation

(Per DDR2 SDRAM Die)

Programmable Burst lengths: 4 or 8

Auto Refresh and Self Refresh Modes (I/T Version)

On Die Termination (ODT)

Adjustable data – output drive strength

1.8V 0.1V common core power and I/O supply

Programmable CAS latency: 3, 4, 5, 6 or 7

Posted CAS additive latency: 0, 1, 2, 3, 4 or 5

Write latency = Read latency - 1* tCK

Organized as 64M x 64

Weight: AS4DDR264M64PBG1 ~ 2.0 grams typical

NOTE: Self Refresh Mode available on Industrial and Enhanced temp. only

FUNCTIONAL BLOCK DIAGRAM

Ax, BA0-2

ODT

VRef

VCC

VCCQ

VSS

VSSQ

VCCL

VSSDL

VSSQ

VCCL

VSSDL

VSSQ

VCCL

VSSQ

VCCL

VSSDL

CSb\

CSa\

WEb\

RASb\

CASb\

WEa\

RASa\

CASa\

CKEa\

CKEb\

ODT

UDMx, LDMx

UDSQx,UDSQx\

LDSQx, LDSQx\

CKx,CKx\

DQ32-47

DQ0-15

DQ16-31

DQ48-63

Austin Semiconductor, Inc.

● Austin, Texas ● 512.339.1188 ● www.austinsemiconductor.com

AS4DDR264M65PBG1

Rev. 0.5 06/08

12 3 4 5 6 7...28

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与AS4DDR264M65PBG1相关器件

型号	品牌	获取价格	描述	数据表
AS4DDR264M65PBG1-3/ET	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-3/IT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-3/XT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-38/ET	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-38/IT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-38/XT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-5/ET	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-5/IT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1-5/XT	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit
AS4DDR264M65PBG1R-3/ET	AUSTIN	获取价格	64Mx64 DDR2 SDRAM w/ DUAL CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit

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